"Junction Field Effect Transistor (JFET)" (PDF). ETEE3212 Lecture Notes. Archived (PDF) from the original on 2022-10-09. value of vGS ... for which the channel is completely depleted ... is called the threshold, or pinch-off, voltage and occurs at vGS = VGS(OFF). ... This linea...
深入解析JFET的"夹断电压"（Pinch off voltage）：理解晶体管工作模式的关键转折点 JFET，即结型场效应晶体管，其工作原理中一个关键转折点是"夹断电压"。当栅极-漏极电压（VDS）逐渐增大，电流ID呈现出一个显著变化点，此时电流几乎不再随VDS增加，进入**饱和区**或**pinch-off region**。这个点...
本文详细探讨了JFET（结型场效应晶体管）中的"夹断电压"（Pinch off voltage）概念。在理解JFET的工作机制时，"夹断电压"扮演着至关重要的角色，它定义了JFET从线性工作区域进入饱和区域的转折点。首先，我们需要澄清一个常见的误解，即"夹断"并非意味着JFET的完全"关断"。相反，当JFET的电压达到"夹断...
The Pinch-Off value of the JFET refersto the voltage applied between Drain and Source (with the Gate voltage at zero volts) at which maximum current flows. Operating with the Drain/Source voltage below this value is classed is the "Ohmic Region" as the JFET will act rather like a resistor...
A circuit for generating a reference current proportional over temperature to the pinch-off voltage of a first JFET includes second and third JFETS and first and second resistors. The second JFET has its gate coupled to its source and produces a current which drives the first JFET. Since the...
In this letter, a novel type of high-voltage n-channel junction field-effect transistor (JFET) was designed using a conventional n-channel laterally diffused metal-oxide-semiconductor (n-LDMOS) without changing any step in the process. High-voltage JFET can be a start-up device in power facto...
A junction field effect transistor (JFET) is provided that is capable of a high voltage resistance, high current switching operation, that operates with a low loss, and that has little variation. This JFET is provided with a gate region (<B>2</B>) of a second conductivity type provided ...
The pinch-off voltage and the drain-to-source saturation current of a Junction Field Effect Transistor(JFET)are-8V and5mA,respectively. Determine the drain current(IDfor each gate-tosource(VGS)voltage ranging from0V to-10V....
New results in fabrication of JFETs based on sublimation grown epitaxial structures in 6H-SiC are presented. Low threshold voltages without essential decrease of drain current is obtained.Silicon carbide and related materials: Fifth international conference on SiC carbide and related materials(ICSCRM'93...
Pinch-off type vertical junction field effect transistor and method of manufacturing the sameA junction field effect transistor (JFET) is provided that is capable of a high voltage resistance, high current switching operation, that operates with a low loss, and that has little variation. This ...