全文内容: 夹断效应pinch-off 重新修正我们的公式和V-I曲线 1、夹断效应 pinch-off 如下图Fig. 2,通过前两期的分析我们知道当漏极(D)电压高于源级(S)电压时,沟道中的电流分布式不一样的(不知道这个事儿的请翻看前两期内容)。 Fig.2 我们分三种情况讨论这个事,前提是V_GS>V_TH,因为只有满足这个条件时,...
当VDS超过夹断电压时，JFET的行为如同一个电阻，但随着VDS进一步增加，耗尽层的增厚限制了导电区域，导致电流控制的非线性效应，进入饱和区。此时的电压阈值称为"pinch-off voltage"（VP），对于增强型MOSFET，这个概念对应于"阈值电压"（threshold voltage）。理解JFET的pinch-off voltage是设计和分析电子电...
A trench MOSFET with short channel length and super pinch-off regions is disclosed, wherein the super pinch-off regions are implemented by forming at least two type pinch-off regions for punch-through prevention: a first type pinch-off region with a wide mesa width generated between lower ...
The differential equation describing the small signal behavior of a MOSFET channel is derived. Based on the analogy of the channel to distributed transmission lines, which has been very well established in literature, an entirely new RGC line model of MOSFET is presented. The element values of ...
Role of velocity saturation in lifting pinchoff condition in long-channel MOSFET W on the drain end, in contrast with the well-known pinchoff behaviour, where the carrier density is shown to vanish at the saturation point. The carrier d... VK Arora,MB Das - 《Electronics Letters》 被引量...
implantedsiliconMESFET inpost-annealcondition.IEEE TransElectronDevices 1989 36 1):81 [7] PetersD SchornerR FriedrichsP.An 1800V triple implantedvertical6H-SiCMOSFET.IEEETransElectron Devices 1999 46 3):542 [8] HorsfallAB OrtollandS WrightNG.Doubleimplanted powerMESFET technologyin4H-SiC.MaterialsSci...
A power semiconductor device having a self-aligned structure and super pinch-off regions is disclosed. The on-resistance is reduced by forming a short channel without having punch-through issue. The on-resistance is further reduced by forming an on-resistance reduction implanted drift region between...
Y TaruiUSUS3821776 * 1971年12月27日 1974年6月28日 Kogyo Gijutsuin Diffusion self aligned mosfet with pinch off isolationUS3821776 * 1971年12月27日 1974年6月28日 Kogyo Gijutsuin,Ja Diffusion self aligned mosfet with pinch off isolation
Trench mosfet with super pinch-off regionsdoi:US20120080748 A1USUS20120080748 * 2010年9月30日 2012年4月5日 Force Mos Technology Co., Ltd. Trench mosfet with super pinch-off regions
The implementation of the Lin model for the non pinchoff depletion mode MOSFETs directly into the source code of the SPICE 2G.5 circuit simulation program is described. The computational advantages of our implementation over Lin's subcircuit approach are pointed out, and, more significantly, ...