1、PIN太阳能电池 一建模过程1.作图如图1-1 p-doped1n-doped423intrinsic air top图1-1.几何12.形成联合体二材料1.材料如图2-1 区域4为空气层,区域1、2、3为硅SiliconAir图2-1.材料选择三物理场1.电磁波,频域(emw) 应用于“所有域”,如图3-1-1图3-1-1端口 端口波激励“开”,覆盖“完美电导体1”...
This paper presents one approach to the modeling of an abrupt junction PIN photo- diode light sensor using COMSOL Multi- physics(R) software and the incorporated SPICE(R) capability. The current model is built using the capabilities of SPICE in COMSOL Multiphysics 4.0a. This model demonstrates ...
11.1D Plot Group 11,如图 6-11 如图6-11 线图: Electric potential (V) 七.参考文献 1.[emuch.net]Handbook_of_Photovoltaic_Science_and_T(来源于小木虫网站) 2.Numerical Modeling of P-i-N Solar Cell(来源于 comsol 仿真论坛) 3.Gaas pin photodiode(来源于 Application Libraries)©...
砷化镓 PIN 光电二极管 Application ID: 19705 这个简单模型演示如何使用半导体光电子学接口对简单的砷化镓 PIN 二极管结构建模,其中分析了半导体中的激发和自发发射,通过自洽方式引入了相应的光吸收和复折射率的相关变化。
In the quest of the potential and superior LWIR photodetector we have designed and simulated InAsBi based PIN photodiode using COMSOL multiphysics. The device is designed with a radius of 5m and total height of 1m and compared with a InAs based photodiode. In compare to InAs PIN photodiode,...