The mechanism for electrical conduction is investigated by the dark temperature-dependent current鈥搗oltage characteristics of Si PIN photodiodes with different photosensitive areas.The characteristic tunneling energy E_(00) can be obtained to be 1.40 me V,1.53 me V,1.74 me V,1.87 me V,and 2.01...
Series i 900-1700 nm InGaAs photodiode, high IR sensitivity, low dark current 6b系列:蓝绿光敏感型光电二极管 Order # Chip Package Active area Dark current Rise time(ns) Size(mm)/Area(mm²) (nA) 5V 410 nm.5V.50 Ω 501429 PS1-6b TO52S1 1x1/1 0.05 10 501430 PS1-6b LCC6.1 1x1/1...
InGaAs PIN Photodiode Module Features特征 ØSmall dark current低暗电流 ØHighreliability高可靠性 ØHighAccuracy高灵敏度 Applications应用 ØPower Meter功率计 极限额定值 绝对最大额定参数 参数 符号 条件 数值 单位 储藏温度 Tstg - -40~+100
Photo-diode Responsivity A/W 0.7 0.8 Photo-diode Dark Current (25Deg.C) nA – 1 Transimpedance Ohms 400 600 Linear Input Range dBm – 0 Average Equivalent Input Noise pA/rt Hz 13 18 Signal Output and Couple – 50Ω, AC Coupled RF Output Port – 2.92mm, K Type, Female Optical Fiber...
SPDI433-01 PIN Photo Diode 描述- 本资料介绍了SPDI433-01型PIN光电二极管。该器件是一款高输出、高速响应的光电二极管,采用塑料封装,具有宽角度响应和低剖面设计。资料提供了其尺寸、最大额定值、电光特性以及包装规格等信息。 型号- SPDI433-01 Nov, 2013 - KODENSHI - 数据手册 代理服务 技术支持 批量...
Low dark current and blue enhanced a-Si : H/a-SiC : H heterojunction n-i-delta(i)-p photodiode for imaging applications This paper presents an a-Si:H/a-SiC:H heterojunction n-i-delta(i)-p photodiode with low dark current and enhanced short wavelength responsivity suitable fo... Serv...
In my project, I use the PIN Photodiode. As the title, it's BPW34BS, I'm reading it's datasheet. But i don't understand some problems below: 1. What is the Dark current? 2. What is the Spectral sensitivity? 3. Open-Circuit Voltage (Ev=1000 lx). So, "lx",what is mean?
In zero bias, light falling on the diode causes a current across the device, leading to forward bias which in turn induces "dark current" in the opposite direction to the photocurrent.This is called the photovoltaic effect, and is the basis for solar cells. It is therefore poss...
Dark current (max.) 20000 pA Cutoff frequency (typ.) 20 MHz Terminal capacitance (typ.) 130 pF Noise equivalent power (typ.) 6.6×10-14 W/Hz1/2 Measurement condition Ta=25 ℃, Typ., unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 ...
Photodiode DC ResponsivityA/W0.40.6– Bit rateGbps–40– Equivalent input noise densitypA/√Hz–1825 Photodiode dark current/PDnA–101000 Optical OverloaddBm+3+4.6– SensitivitydBmTyp. -12(@1550nm); -7(@1310nm) Trans-Impedance Amplifier Elimination–Optional ...