ATLAS toolbox of Silvaco results shows ID-VDS characteristics of the 1聽渭m gate length. Simulation results show both piezoelectric and spontaneous polarization effects at the interfaces of Al0.30Ga0.70N/AlN/GaN structure, contrary to the conventional HEMTs. The insertion of the very thin AlN ...
An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR A large-signal electrothermal model for AlGaN/GaN HEMTs including gate and drain related trapping effects is proposed here. This nonlinear model is well fo... O ...
An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR A large-signal electrothermal model for AlGaN/GaN HEMTs including gate and drain related trapping effects is proposed here. This nonlinear model is well fo... O ...
We theoretically and experimentally investigated thin films based one-dimensional photonic crystal with detection of environmental humidity. The sensing elements are multilayer porous thin films deposited on fiber end face by e-beam evaporation. Theoretical simulation shows that the resonant mode of the ph...
The model combines a molecular dynamics simulation for t... Y Ping,N Liao - 《IEEE Transactions on Advanced Packaging》 被引量: 32发表: 2008年 Physical Mechanism of Buffer-Related Current Transients and Current Slump in AlGaN/GaN High Electron Mobility Transistors Two-dimensional transient analyses...
Physical simulation of GaN based HEMT Recent improvements in the understanding and fabrication of GaN have led to its application in high frequency communication and high voltage switching syst... A Vais 被引量: 3发表: 2012年 Photoresist 3D profile related etch process simulation and its application...
Compact physical based simulation of high temperature semiconductor field effect transistors and comparison with measured data.Wide bandgap semiconductors have impressive potential for high temperature applications; however realizing integrated circuit (IC) at high temperatures is still difficult. GaAs-based ...
Even though the performance figures are outstanding, GaN-based HEMTs are not as mature as some competing technologies, which means that establishing the reliability of the technology is important to enable use in critical applications. The objective of this research is to understand the physical ...
This work presents a physical analytical model for the total gate charge and C-V characteristics of AlGaN/GaN HEMT devices. A continuous analytical model of the gate-charge is developed first, based on an assumption of considering only the first energy level in the triangular quantum well approxi...
A Surface-Potential-Based Compact Model of AlGaN/GaN HEMTs Power Transistors A physics based compact model for III-nitride HEMTs developed for SPICE circuit simulation of power transistors is presented. The HSP model (acronym for HE... P Martin,R Hahe,L Lucci - Techconnect Summitclean Technol...