PECVD SiO2 and SiON films dependant on the rf bias power for low-loss silica waveguide. Y.T. Kim D.S. Kim and D.H. Yoon. Thin Solid films . 2005Kim Y T,Kim D S,Yoon D H.PECVD SiO2 and SiON films dependant on the rf bias power for low--loss silica waveguide l J j.Thin ...
第1期 微处理机 No.1 2010年2月 MICROPROCESSORS Feb.,2010 PECVD淀积 SiO2薄膜工艺研究崇 亢拮,黎威志,袁凯,蒋亚东 (电子科技大学光电信息学院 电子薄膜与集成器件国家重点实验室,成都610054) 摘要:研究了等离子增强化学气相淀积(PECVD)制备非晶SiO:薄膜的工艺。系统地研究 了反应气体流量比、射频功率、淀积腔内压强...
Samco’s Cathode PECVD technology leverages an RF-driven lower electrode to enable high-rate deposition of SiO2 and SiNx films with excellent step coverage and controllable properties. Utilizing proprietary self-bias deposition and a liquid TEOS source,
film properties such as refractive index, stress, electrical characteristics and wet chemical etch rate. Our cutting-edge Plasma Enhanced CVD system is suitable for dielectric films passivation (e.g. SiO2, SixNy), silicon carbide, amorphous silicon, hard mask deposition and anti-reflective coatings....
MEMS Deposition rate 20 nm/min Refractive index 2.00 RF power 80 W Fast Silicon Dioxide (SiO2) PECVD deposition process Optoelectronics Deposition rate 110 nm/min Refractive index 1.68 BOE < 650 nm/min Silicon Carbide (SiC) deposition process at low temperature Optoelectronics Deposition temper...
(N2O) as precursor gases.The ellipsometer and stress measurement system were used to test the thickness, refractive index, uni鄄formity and stress of the SiO2film fabricated, and the effects of ratio frequency(RF) power, chamberpressure and N2O/SiH4flow ratio on the properties of SiO2film were...
refractive indexRutherford backscatteringsilicon compoundsSiO 2 films have been deposited using TEOS and oxygen in a microwave excited plasma reactor at a pressure of 3 mTorr. Layers have been characterized using FTIR, refractive index, chemical etch rate, electron spin resonance, Rutherford ...
刻蚀和PECVD培训—ETsolar
内容提示: 1衬底温度对 PECVD 法生长 SiO2 薄膜性能影响的研究 衬底温度对 PECVD 法生长 SiO2 薄膜性能影响的研究 高尚* ,连洁,宋平,马铮,王晓,吴仕梁 (山东大学 信息科学与工程学院 光电工程系,山东 济南) 摘要: 使用等离子增强型化学沉积法(PECVD)制备 SiO2 薄膜具有诸多优点。如何减少产物中的杂质元素以获得...
the PECVD SiO2layer has a refractive index (RI) greater than or equal to approximately 1.47. 5. A semiconductor according to claim 1, wherein: the PECVD SiO2layer has wet etch rate less than or equal to approximately 300 Å per minute. ...