Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductorsdoi:10.1002/adma.202202472Wang, XinyuChen, XinyuMa, JingyiGou, SaifeiGuo, XiaojiaoTong, LingZhu, JunqiangXia, YinWang, DieSheng, ChumingAdvanced Materials
Homojunction-loaded inverters based on self-biased molybdenum disulfide transistors for sub-picowatt computing Xiaofu Wei Xiankun Zhang Yue Zhang Nature Electronics(2024) Wafer-scale carbon-based CMOS PDK compatible with silicon-based VLSI design flow ...
Y. et al. Almost perfectly symmetric SWCNT-based CMOS devices and scaling. ACS Nano 3, 3781–3187 (2009). 21. Chen, Z. et al. An integrated logic circuit assembled on a single carbon nanotube. Science 311, 1735 (2006). 22. Ryu, K. M. et al. CMOS-analogous wafer-scale nanotube-...
A silicon on insulator (SOI) field effect transistor (FET) structure is formed on a conventional bulk silicon wafer. The structure includes an electrical coupling between the channel region of the FET with the bulk silicon substrate to e... DH Ju - US 被引量: 45发表: 2001年 Faulty behavio...
Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors (Adv. Mater. 48/2022)doi:10.1002/adma.202270334Wang, XinyuChen, XinyuMa, JingyiGou, SaifeiGuo, XiaojiaoTong, LingZhu, JunqiangXia, YinWang, DieSheng, ChumingAdvanced Materials...