Surface-potential solutions to the Pao-Sah voltage equation. Solid State Electron 2006;50(7-8):1320-9.W.Z. Shangguan, M. Saeys, and X. Zhou, Surface-potential solutions to the Pao-Sah voltage equation, Solid State Electron. 50(7-8) (2006), pp. 1320-1329....
Pao-Sah电压方程牛顿-拉夫森算法目前集约建模的趋势是由基于阈值电压的模型转向基于表面势的模型,而后者需要一个对非线性Pao-Sah电压方程的精确解,作为隐含数方程,Pao-Sah电压方程必须数值求解以求得表面势。牛顿算法是一个收敛较快而常用的算法,但却易收敛到错误的根,提出一个能保证牛顿算法收敛到正确的表面势解、...
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We present a new version of the Pao-Sah double integration formula. A new formulation, while mathematically equivalent to the original one, increases the speed of computations by more than an order of magnitude. This reformulation of the Pao-Sah model remains applicable in the extended temperature...
Bardy, "Taylor expansion of surface potential in MOSFET: application to Pao-Sah integral," Active and Passive Electronic Components, vol. 2010, Article ID 268431, 11 pages, 2010.H. Murray, P. Martin, and S. Bardy, "Taylor expansion of surface poten- tial in MOSFET: application to Pao-...
Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors : H. C. Pao and C. T. Sah , Solid St. Electron. , 9 , (1966), p. 927doi:10.1016/0026-2714(67)90234-XMicroelectronics Reliability