P-well n-well随打随译 世界领先的质量 拖放文件 立刻翻译 ▾外部资源(未审查的) [...] policies used and the reasonableness of accounting estimates made by the directors, as well as evaluating the overall presentation of the financial statements. asiasat.com 審核工作亦包括評估董事所採用的會計...
PWELL即P阱区，P_WELL只不过是PWELL引线出去的端口名，实际上是一个意思；DN_WELL是深N阱区引线出去的端口名，DNWELL即deep nwell 深N阱
P-WELL就是twin-well工艺里的P-WELL啦,和N-WELL对应。 形象比喻一下,P-field是在隔离场氧下浓度加强的p-well,p-body是包在更深NWELL里的p-well P- field不能理解为guard ring,一般P- field基本等于P well区域,目的是通过注入P型杂质来增加场氧下面P well的表面浓度,防止寄生的N沟道场管开启。在某些HV或...
待解决 悬赏分:1 - 离问题结束还有 P-well under the N-well is used for proper RESURF action问题补充:匿名 2013-05-23 12:21:38 P阱下的N阱是用于适当RESURF行动 匿名 2013-05-23 12:23:18 P-N下的用于适当resurf行动 匿名 2013-05-23 12:24:58 P-well在N-well之下为适当的RESURF行动...
是指Nwell（N阱） 和Pwell（P阱），都是做在P-epi上的，其中Nwell中做PMOS管，Pwell中做NMOS管。早期的单井工艺就是在p-substrate上做Nwell，不做Pwell，NMOS管直接做在substrate中，双阱的具体好处，我也不是特别明白，估计有利于NMOS管的沟道参杂调节和降低闩锁敏感性吧。
摘要: 公开通过在一个或者多个浮置多晶硅栅极指状物的两侧上形成带来实现更低要求的N阱或者P阱带结构的实施例. Example bring required to achieve lower N-well or P-well structure with one or more of the floating polysilicon gate fingers are formed on both sides of the fingers by the public....
This letter presents the design, measurement results, and modeling formula of a P-well/deep N-well photodetector (PD) realized in a standard 65-nm complementary metal-oxide-semiconductor without process modification. With 0.5-V reverse bias (VPD), the measured dc responsivity to an 850-nm light...
Making of CMOS using N well Step 1:First we choose a substrate as a base for fabrication. For N- well, a P-type silicon substrate is selected. Substrate Step 2 – Oxidation:The selective diffusion of n-type impurities is accomplished using SiO2 as a barrier which protects portions of the...
(1) N+/P-sub及P+/N-well造成PN junction,如果P-sub为由contact接至最低电位,或N-well未接至最高电位,由N+或P+所做成的source和drain,则未和P-sub或N-well行程反向偏压,易造成"漏电". (2) 由於P-sub和N-well分别接至最低... 文档格式: .doc 文档大小: 87.5K 文档页数: 4页 顶/踩数: 3 /...
免费查询更多场效应管pwell详细参数、实时报价、行情走势、优质商品批发/供应信息等,您还可以发布询价信息。