P-TYPE SUBSTRATE BURIED TYPE SEMICONDUCTOR LASER AND ITS MANUFACTUREPURPOSE: To provide a buried type semiconductor laser which uses a P-type substrate and is excellent in high temperature characteristics, and its manufacturing method.MIZUTANI TOMOKO...
一般的硅片(wafer)基材(substrate)可区分为N,P两种类型(type),何谓 N, P-type wafer?相关知识点: 试题来源: 解析 N-type wafer 是指掺杂 negative元素(5价电荷元素,例如:P、As)的硅片, P-type 的wafer 是指掺杂 positive 元素(3价电荷元素, 例如:B、In)的硅片。
In back-contact solar cells, the emitter is conventionally formed by diffusion of a n-type dopant into a p-type substrate. We demonstrate a back-contact solar cell without diffusion. The p-n junction in our cell is formed by the record-high Schottky barrier of 1.1 eV between low work-fun...
A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30°C for an LD structure with two as-cleaved facets, and 53 mW at 25°C utilising AR coating...
High quality, controlled-structure nanowires (NWs), grown on a transparent flexible substrate, have attracted great interest as a mean of harvesting solar and mechanical energy. Clarifying their optical and piezoelectric properties is essential for this application. In this paper, vertically aligned lith...
Hall measurement results indicated that ZnO films deposited on common glass substrate were p-type conductivity when Zn:N:Al atomic ratio amounts to 1:3:0.1. However, ZnO films deposited on corning 7059 glass substrate showed n-type conductivity. Secondary ion mass spectroscopy demonstrated that Na...
Electrochemical micromachining (ECM) of p-type Si substrates is accomplished in HF-based solutions by applying nanosecond potential pulses between the substrate and a tungsten tool electrode. With sufficiently high potential pulses, the silicon potential locally reaches the electropolishing regime and micros...
We have fabricated the first room-temperature (RT) continuous-wave (CW) 0.85-/spl mu/m 8/spl times/8 bottom-emitting vertical-cavity surface-emitting AlGaAs-GaAs DBR QW laser diode (VCSEL) arrays on a p-type GaAs substrate, which are applicable to optical interconnection. The laser character...
In this paper, we report, for the first time, the fabrication and characterization of p-type doped-channel Si/SiGe field-effect transistors (DCFETs) using uniformly doping and delta doping in the SiGe conducting channel. For the same device parameters and process conditions, the δ-DCFET is ...
The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. The semiconductor layer comp...