当输入电压VIN超过20V时,该电路就不再适用了,否则会有击穿损坏的风险。② 下图所示,这种使用单颗P-MOSFET组成的Load Switch电路无法实现防电流倒灌功能,当输出端电压高于输入端电压时,P-MOSFET的体二极管(body diode)或寄生二极管(parasitic diode)就构成了反向电流路径。 2、Single P-MOSFET负载开关电路方案B 上图...
特性:P沟道MOSFET的开关速度相对较慢且导通电阻较高,但其在高边开关(High-Side Switch)应用中具有独特优势。由于P沟道MOSFET需要从栅极到源极的负电压才能导通,因此它可以在高电位侧控制电路的通断而无需额外的电平转换电路。此外,P沟道MOSFET的阈值电压为负值且导通电阻相对较高。 应用:P沟道MOSFET在汽车电子、工业...
矽源特ChipSourceTek-CST30P07L是BVDSS=-30V，RDSON=23mΩ，ID=-7.0A的P-Ch快速切换Mosfet。提供SOT23-3L封装。The 矽源特ChipSourceTek-CST30P07L is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch ap...
The 矽源特ChipSourceTek-MX4953 uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a load switch or in PWM applications.矽源特ChipSourceTek-MX4953特性：VDS=-30V,ID=-5.3A RDS(O...
Description & Applications P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices 描...
Onsemi 电源负载开关(路径管理) NTGD1100LT1G MOSFET 8V +/-3.3A P-Channel w/Level Shift NTGD1100LT1G 60000 Onsemi SOT23-6 ￥1.5610元>=3000 个 深圳市博奕泰电子科技有限公司 查看下载 立即询价 查看电话 QQ联系 Skyworks AAT4710IRN-T1 电源开关 IC - 配电 P-Channel MOSFET Power Switch ...
Lead free product is acquired Surface Mount Package 矽源特ChipSourceTek-PE01P30K Application: PWM applications Load switch Power management 矽源特ChipSourceTek-PE01P30K Switching Test Circuit: 矽源特ChipSourceTek-PE01P30K TO-252-2L Package Information:...
R DS(ON) < 13mΩ @ V GS =-10V R DS(ON)< 19mΩ @ V GS =-4.5V High Power and current handing capability Lead free product is acquired Surface Mount Package 矽源特ChipSourceTek-PE4407A应用：PWM applications Load switch Power management 矽源特ChipSourceTek-PE4407A典型应用及引脚：
Load Switch Power Management 矽源特ChipSourceTek-AKT30P55G的信息包括代码、封装类型、标记代码、外形尺寸和包装方式等。例如，PDFN5X6-8L封装的矽源特ChipSourceTek-AKT30P55G的外形尺寸为13英寸卷盘，每卷包含5000个器件。总之，矽源特ChipSourceTek-AKT30P55G是一款先进的P沟道增强型Mosfet，采用先进的沟槽技术...
一、MOSFET软启动PowerSwitch技术原理 MOSFET软启动PowerSwitch技术是一种通过逐渐增加MOSFET的栅极电压来逐渐增加MOSFET的导通程度,从而减小启动时的冲击电流,降低对电源和设备的冲击,同时减小电磁干扰(EMI)的技术。在PowerSwitch应用中,MOSFET的软启动通常是通过一个外部的控制电路来...