1)P-dopingP掺杂 1.The effect of P-doping on the structure,morphology and luminescent properties of BaMgAl_10O_17:Mn2+ were determined by X-ray diffraction,scanning electron microscopy,Fourier-transform infrared spectroscopy,energy dispersive X-ray spectroscopy and vacuum ultraviolet(VUV)spectra.采用...
1) p-doping p 型掺杂 2) p-doping p型掺杂 1. This article gives a description of the progress in self-com-pensation model forp-doping, the codoping process and mechanism, PL . 使用金属有机物化学气相沉积(MOCVD)方法已经获得实用性的p型掺杂,但是其电学和光学特性都不能让人满意。
p-doping 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 P-掺杂 翻译结果2复制译文编辑译文朗读译文返回顶部...
P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUBSTRATE 发明人: LUTGEN Stephan;MURAD Saad;CHITNIS Ashay 申请人: 申请日期: 2017-09-11 申请公布日期: 2017-12-28 代理机构: 代理人: 地址: Heilbronn DE 摘要: An epitaxial group-ill-nitride buffer-layer structure is provided...
A detailed study of the effect of p -doping of the active region on characteristics of long-wavelength InAs/GaAs QD lasers is performed. As the doping level increases, the characteristic temperature rises and the range of temperature stability for the threshold current density is broadened. In a...
Klein1 Correlations between the level of p-doping exhibited in large area chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual charges created by a variety of surface treatments to the silicon dioxide (SiO2) substrates prior to CVD graphene transfer...
The process of "p-doping" involves introducing mobile charge electronic charge carriers into the material to improve its conductivity and stability, and in this case mitigated the diffusion of lithium ions, a major problem that contributes to the operational instability of PSCs. ...
百度爱采购为您找到1371家最新的p-doping材料产品的详细参数、实时报价、行情走势、优质商品批发/供应信息,您还可以免费查询、发布询价信息等。
This work indicates that performance of PM‐PPDs can be markedly enhanced by using p‐doping with strong oxidizing agents, beneficial for an enhancement in hole mobility in F6TCNNQ:PC71BM:P3HT active layers. 展开 关键词: hole-mobility p-doping photodetectors photomultiplication ...
Electronic structure, diffusion, and p-doping at the Au/F 16 CuPc interface Electronic structure, diffusion, and p-doping at the Au/F16CuPc interface - Shen, Kahn () Citation Context ..., 34] . Thus, the dependence of ... C Shen,A Kahn - 《Journal of Applied Physics》 被引量: ...