The process of "p-doping" involves introducing mobile charge electronic charge carriers into the material to improve its conductivity and stability, and in this case mitigated the diffusion of lithium ions, a major problem that contributes to the operational instability of PSCs. With the new techni...
在论文里看到p–doping,有人知道这是什么意思吗？发自小木虫Android客户端
Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap, high breakdown field and energy density, excellent chemical and thermal stability. However, their application has been severely hindered by the low p-doping efficiency, which is ascrib...
For P-type doping, the impurity level (acceptor level) is an empty band that energy is lower than the HOMO, where an electron can jump to the impurity level and create a hole to conduct electricity. From: Encyclopedia of Materials: Electronics, 2023 ...
Motivated by the doping of P atoms into the lattice of MoS2, the peaks belonging to MoS2 has slightly Conclusions Given all the above, the P–MoS/NiS@CHNS catalyst with remarkable HER performance has been successfully designed by facile in-situ phosphorus-sulfuration. The unique P–MoS2/NiS...
In summary, a diagnostic technique using thermal quenching analysis was proposed to examine the energy position of impurity energy level of the dopants, which is helpful for the design of highly effective p-doping. A phenomenological rate-equation model, considering both the thermal escape of bound...
doping是什么意思 音标: 英 [dəʊpɪŋ] 美 ['doʊpɪŋ] [计] 掺杂 [化] 掺杂 v take drugs to improve one's athletic performance v add impurities to (a semiconductor) in order to produce or modify its properties v give a narcotic to...
P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUBSTRATE 发明人: LUTGEN Stephan;MURAD Saad;CHITNIS Ashay 申请人: 申请日期: 2017-09-11 申请公布日期: 2017-12-28 代理机构: 代理人: 地址: Heilbronn DE 摘要: An epitaxial group-ill-nitride buffer-layer structure is provided...
1) p-doping p型掺杂 1. This article gives a description of the progress in self-com-pensation model forp-doping, the codoping process and mechanism, PL . 使用金属有机物化学气相沉积(MOCVD)方法已经获得实用性的p型掺杂,但是其电学和光学特性都不能让人满意。
Furthermore we note that the doped film conductivities, as well as the threshold voltages and ON/OFF ratios of transistors incorporating those films, show trends as a function of F4-TCNQ concentration consistent with p-type doping. The number of charge carriers in the film increases with doping...