通道模式: Enhancement 配置: Single 高度: 1 mm 长度: 2.9 mm 产品: MOSFET Small Signal 系列: DMP2305 晶体管类型: 1 P-Channel 宽度: 1.3 mm 商标: Diodes Incorporated 下降时间: 23.2 ns 产品类型: MOSFET 上升时间: 13 ns 工厂包装数量: 3000 子类别: MOSFETs 典型关闭延迟时间...
P-Channel Enhancement MOSFET Small Signal MOSFETs Trench LV MOSFET Technology Fetures Applications Wayon-WM02P160R Features :• Way-on Small Signal MOSFETs • VDS= -20V, ID = -16A • RDS(on) < 17mΩ @ VGS = -4.5V ...
通道模式: Enhancement 高度: 1.2 mm 长度: 2.9 mm 产品: MOSFET Small Signal 系列: NDS0610 晶体管类型: 1 P-Channel 宽度: 1.3 mm 商标: ON Semiconductor / Fairchild 下降时间: 6.3 ns 产品类型: MOSFET 上升时间: 6.3 ns 工厂包装数量: 3000 子类别: MOSFETs 典型关闭延迟时间: ...
JMTP160P03D JMT Dual 30V 11A P-channel Enhancement Mode Power MOSFET 捷捷微-JieJie一级代理商 汇友迪科技优势供应 更新时间:2024年04月05日 爱采购-机械五金好物采购节,行业好货一站式购齐! 价格 ￥0.66 起订量 4000个起批 货源所属商家已经过真实性核验 发货地 广东省 深圳市 数量 获取底价 ...
AP30P10D永源微100V P-Channel Enhancement Mode MOSFETAP30P10D是一款由永源微电子推出的100V P-Channel Enhancement Mode MOSFET。这款器件具有卓越的性能和可靠性，广泛应用于各种电源管理、电机控制和功率转换等领域。AP30P10D的主要特性包括：- 电压规格：100V- 导通电阻：低至0.4ohm- 开关速度：快- 稳定性...
型号 DMG3415U-7 MOSFET P-CHANNEL ENHANCEMENT MODE 深圳市哲航电子有限公司所有的价格均为参考价格,请亲爱的朋友们在看到宝贝之前先跟我们的销售人员联系。我们会按照行情报给您最优惠的价格,谢谢合作,祝您生活愉快!我司保证所有货物均为全新原装,保证质量 保证无铅 保证同质产品 优势价格 让您开心逛,放心买!!!
The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ●VDS= -30V,ID= -12A RDS(ON)< 25mΩ @ VGS=-4.5V...
in Stock Nce4953 Nce P-Channel Enhancement Mode Power Mosfet with Sop-8 for Use as a Load Switch or in PWM Applications. US$0.043-0.045 5,000 Pieces (MOQ) Silicon Carbide Mosfet Has Low on-Resistance, Low Loss and High Frequency Negotiable 100 Pieces (MOQ) Ao4435...
30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode power Wayon-WMS12P03T1 General Description :WMS12P03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior sw...
JMTL2301C Description JMT P-channel Enhancement Mode Power MOSFET Features VDS = -20V, ID = -3A RDS(ON) < 70mΩ @ VGS = -4.5V RDS(ON) < 100mΩ @ VGS = -2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...