P-TYPE SILICON SINGLE CRYSTAL HAVING VARIOUS RESISTANCE CHANGES AND A METHOD FOR MANUFACTURING THE SAMEPURPOSE: A P-type silicon single crystal and a manufacturing method thereof are provided to increase withstand voltage using a czochralski method.;CONSTITUTION: A silicon melted solution is prepared(...
Implanted 4H-SiC layers of p-type conductivity and sheet resistance in the range of 1.6 × 104to 8.9 ×102Ω□, corresponding to a resistivity in the range of 4.7 × 101to 2.7 × 102Ω cm have been obtained. Hall carrier density and mobility data in the temperature range of 140–720 ...
摘要: The temperature coefficient of resistance for n- and p-type silicon has been calculated between 50 and 125°C for a wide range of concentrations and levels of compensation. These results provide a useful guide for the design of silicon integrated resistors....
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Silicon solar cells may be made from either P type substrates with N type dopants to form the geometries or with N type substrates and P type dopan... PL Shah,CR Fuller - US 被引量: 36发表: 1978年 加载更多来源期刊 Solar Energy Materials 研究点推荐 INSULIN RESISTANCE ...
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(GBs)1,16,17could lead to an increase in sheet resistance and inadequate functioning of electronic devices, resulting in the degradation of electrical properties12,13,14. Recent pioneering studies have been made to synthesize 2H-MoTe2through solid-to-solid phase transitions18,19or 2D seed growth...
A formula for the p-i-n diode resistance is presented and compared with experimental resistance versus frequency data for both silicon and gallium arsenide p-i-n diodes.Effective Microwave CADCaverly, R.H.Hiller, G.
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