P-N 结模型(P-N Junction Model) P-N 结是半导体器件(如二极管、太阳能电池和晶体管)的基本结构,由两种不同掺杂类型的半导体组成: P 型半导体:掺入受主杂质(如 B、Al),主要载流子是空穴(正电荷)。 N 型半导体:掺入施主杂质(如 P、As),主要载流子是电子(负电荷)。当 P 型和 N 型材料相结合时,在交界处形成一个 P-N 结
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n JunctionExperimental-Theoretical Comparison Energy Band Diagram of a Biased p/n Junction The Shockley Diode Equation Physics of the Shockley Diode Equation Numerical Example of a Shockley Diode The Sah-Noyce-Shockley Diode Equation Breakdown of Reverse DC Current in a p/n Junction Experimental-...
举例来说,一个p-n接面(p-n junction)的能带会弯折,起因是原本p型半导体和n型半导体的费米能阶位置各不相同,但是形成p-n接面后其费米能阶必须保持在同样的高度,造成无论是p型或是n型半导体的传导带或价带都会被弯曲以配合接面处的能带差异。 上述的效应可以用能带图(band diagram)来解释,。在能带图里...
p i n diode pin二极管p i n diode phase shifter p i n 二极管移相器p i n photodiode p i n 光电二极管p n junction p n 结p n junction isolation p n 结隔离p n junction rectification p n 结型整流p type conduction p 型导电性p type diffusion p 型扩散p type dopant p 型掺杂剂p type...
半导体物理基础-第四章p-n结
P-Njunctiondiode T形网络 T-connectednetwork v-i特性 v-icharacteristic 安培 ampere 凹电阻元件 concaveresistor 半波对称函数 half-wavesymmetricalfunction 比例器 scaler 变比 transformationratio 标称值 nominalvalue 并联谐振 parallelresonance 波长 wavelength ...
A schematic representation of the band diagram for a CuO–ZnO heterojunction under illumination, obtained in a p–n diode based on a single CuO–ZnO_2 core–shell nanowire is depicted in Fig. 7c, inset. Under illumination of the p–n CuO–ZnO heterojunction, the generated photocurrent is en...
The neutral transition region within the P–N junction is called the depletion layer. When low-energy light strikes the photodiode, unbound electrons in the N-layer are promoted in the conduction band and the bound electrons in the P-layer are pushed onto the Fermi level. When higher-energy...
The graph will be changed for differentsemiconductor materialsused in the construction of a P-N junction diode. The below diagram depicts the changes. Comparison with Silicon, Germanium, and Gallium Arsenide This is all about theP-N Junction diode’s theory, working principle and its applications....