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RQ6E060AT是ROHM推出的P沟道中功率MOSFET,具有低导通电阻,高功率小型封装等优点,可应用于开关、负载开关场合。RQ6E060AT的漏源电压额定值为-30V,栅源电压额定值为±20V,连
为了满足开关电源对于MOSFET的需求,ROHM公司推出了一款性能优异的双P沟道MOSFET-UT6J3,该器件是低导通电阻的功率MOSFET,漏源电压为-20V,RDS(on)(Max.)=85mΩ
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ROHM推出的双P沟道功率MOSFET SH8J66,耗散功率为2.0W,可承受的最大漏-源额定电压为-30V,连续漏极电流最大值额定值为±9.0A,采用SOP8小型表面贴装封装。具有导通电阻低、无
ROHM(罗姆)推出的汽车级P通道功率MOSFET RQ6C050BC,通过了AEC-Q101认证,采用TSMT6小封装,内部集成单只MOSFET,漏极采用多引脚设计,提升过电流能力。开关导通阻抗较小