P-Channel 8 V (D-S) MOSFET SiA427DJ Vishay Siliconix PRODUCT SUMMARY VDS (V) -8 RDS(on) () 0.016 at VGS = - 4.5 V 0.0215 at VGS = - 2.5 V 0.026 at VGS = - 1.8 V 0.032 at VGS = - 1.5 V 0.095 at VGS = - 1.2 V ID (A) - 12a - 12a - 12a - 12a -3 Qg (...
P-Channel 100-V (D-S) MOSFET Si7113DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.134 at VGS = - 10 V 0.145 at VGS = - 4.5V ID (A) - 13.2e - 12.7e Qg (Typ.) 16.5 nC PowerPAK 1212-8 FEATURES • Halogen-free Option Available • TrenchFET® Power ...
Specification Standard Trademark Original Origin Original Production Capacity 10000PCS/Day Product Description MOSFET P-Channel 20V 3.1A SOT23-3 SMD SI2301CDS-T1-GE3Provide Bom services / more than 100,000 types of electronic components TYPE DESCRIPTION Category Discrete Semi...
MOSFET – P-Channel 100 V FQD8P10TM-F085 Description These P−Channel enhancement mode power field effect transistors are produced using onsemi's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on−state resistance, provide superior ...
Specification Customized Trademark Wayon Origin Guangdong, China Production Capacity 10000 Pieces/Day Product Description P-Channel Enhancement MOSFET Small Signal MOSFETs Trench LV MOSFET Technology Fetures Applications Wayon-WM02P160R ...
Specification Standard Origin Original Production Capacity 10000PCS/Day Product Description SSM3J15F P-Channel 30 V 100mA (Ta) 200mW (Ta) Mosfet Transistor SSM3J15Provide bom list services/more than 100,000 types of electronic components TYPE DESCRIPTION Category...
P-ChannelMOSFET ABSOLUTEMAXIMUMRATINGS(T A =25°C,unlessotherwisenoted) PARAMETERSYMBOL5sSTEADYSTATEUNIT Drain-SourceVoltageV DS -30 V Gate-SourceVoltageV GS ±12 ContinuousDrainCurrent(T J =150°C) a T A =25°C I D -6.3-4.6 A T A =70°C-5.1-3.7 PulsedDrainCurrentI DM -25 Continuou...
NEC电子3SJ11A型号P-Channel增强型MOS场效应管产品数据表说明书 Products Catalog Index © 2023http://www.searchdatasheet.com 1 / 9
MOSFET – Dual, N & P-Channel, POWERTRENCH) 2.5 V Specified FDC6327C General Description These N & P−Channel 2.5 V specified MOSFETs are produced using onsemi's advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge...
STRH40P10 Datasheet Rad-Hard 100 V, 34 A P-channel Power MOSFET 1 2 3 TO-254AA D(1) G(3) S(2) SCO6140p Product status link STRH40P10 Features VDS 100 V ID 34 A RDS(on) typ. 60 mΩ Qg 162 nC • Fast switching • 100% avalanche tested • Hermetic package • 100...