ovonic threshold switch 【计】 双向存储开关相关短语 decay (电荷存储管的) 电荷减少 contiguous disk file (存储器) 邻接磁盘文件 body switchover (双向犁的) 犁体翻转机构 美联储 Federal Reserve System of the United States the US Federal Reserve System sequence chart (开关的) 转接顺序图 switching an...
(5) thermal stability, (6) threshold voltage/field (Vth/Eth), and (7) switching speed (ton/toff). Appropriate control of these electrical parameters can greatly satisfy the application of OTS in storage devices, as well as its application in other fields. For 3D high-density memory applicati...
Ovonic threshold switching combines the phase-change memory element with an OTS selector device, both based on a chalcogenide material.Chalcogenide phase-change materials can be quickly and reversibly switched between an amorphous and a crystalline phase with very different optical and electrical ...
We have experimentally demonstrated a strong correlation between the electrical properties of Zn1−xTexOvonic threshold switching (OTS) selector device and the material properties analysed by X-ray diffraction (XRD), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy (XPS). The correlation...
Ovonic threshold switching (OTS) selector is considered to be a promising spiking neuron candidate. As ≈1011 artificial neurons are needed for brain‐... R Wu,S Jia,T Gotoh,... - 《Advanced Electronic Materials》 被引量: 0发表: 2022年 Structural changes during the switching transition of ...
ovonic threshold switch (OTS) 双向阈值开关相关短语 body switchover (双向犁的) 犁体翻转机构 sequence chart (开关的) 转接顺序图 switching angle (Q开关的) 开关角 mid travel (指开关位置) 中间位置 mercury connection (环形水银开关) 水银联接 switching constant (开关时间与磁场强度的比值) 开关常数 ...
A Deep Level Transient Spectroscopy Study of Hole Traps in GexSe1-x-based Layers for Ovonic Threshold Switching SelectorsThe deep levels in amorphous Ge0.5Se0.5 layers have been analyzed by Deep Level Transient Spectroscopy (DLTS). To ... PCB Hsu,S Eddy,D Lin,... - 《Ecs Journal of Solid...