PURPOSE: A mask with different layers overlaid with each other and a method of designing the same are provided to obtain the same CD(Critical Dimension) as a design rule from a real pattern in a poly/active overlaid portion by forming selectively an auxiliary pattern on the poly/active ...
A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second ...
A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second ...