1 Publication Order Number:AND8174/D AND8174/D NIS6111 Better ORing Diode Operation Notes Prepared by: Ryan Liu ON Semiconductor General Description The NIS6111 is a simple and reliable device consisting of an integrated control IC with a low R DS(on) power MOSFET,using hybrid technology. It ...
After reviewing the key features of Silicon design, the results of an in-circuit test are presented, indicating the advantage of using trench Schottky as OR-ing diodes in term of reduced power dissipation, reduced component count and improved ruggedness.Davide Chiola...
Figure 11 shows a circuit with ORing between a discrete diode and a TPS2412/MOSFET section. This circuit can be used to combine two different voltages in cases where the output is regulated, and the additional voltage drop in the Input 1 path is not a concern. An example is ORing of an...
Positive Low Voltage Diode-OR Combines Multiple Switching Converters MOSFETs, supplying 100A to a 1.2V load. The circuit is easily adapted to any supply voltage between 0V and 5V, provided there is a path for up to 4mA VEE current to ground at either the input or the output. Most high...
even with Schottky diodes. This voltage drop also reduces the available supply voltage, which is sometimes critical at the low end of the input operating range. To counter this process, use instead a circuit with “ideal” diode behavior, one that eliminates the forward drop and overcomes th...
outputs from 7.5 to 76 V. The device controls external N-channel power MOSFETs to perform low-voltage-drop ORing, inrush current control, and current limiting functions. The current-limit function actively limits the current drawn by the load, protecting the load from a short-circuit condition....
An I2C™ interface enables the implementation using one small integrated circuit, but it also provides many opportunities for design customization. The following sections describe the main functions of the TPS2459 and provide guidance for designing systems around this device. Control Logic and Power-...
output swings to the rail, and the ORing circuit delivers the MOSFET’s fully enhanced on-resistance. Figure 2MOSFET power ORing using P-channel MOSFETs is the more common choice for single-rail systems when the rail voltage is sufficient to operate the op amp and drive the MOSFET gate. ...
A protection circuits for server racks may include an Oring circuit having a first MOSFET, a first diode, and first and second comparators. Each of the first and second comparators supports a maximum voltage difference that is less than an operational voltage of the power supply. The protection...
A system for protecting server cabinets connected to a power supply, the system comprising: an ORing circuit having a first MOSFET, a first diode connected in parallel with the first MOSFET, and first and second comparators connected to the first MOSFET are operatively coupled, each of the ...