Hubert, A., et al., “A Stacked SONOS Technology, Up to 4 Levels and 6nm Crystalline Nanowires, with Gate-All-Around or Independent Gates (ΦFlash), Suitable for Full 3D Integration”, International Electron De
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide. Nat. Nanotechnol. 9, 262–267 (2014). Article Google Scholar Pospischil, A., Furchi, M. M. & Mueller, T. Solar-energy conversion and light emission in an atomic monolayer p–n diode. Nat. ...
The prominent generalized gradient approximation and integration of the mBJ potential are implemented to estimate the exchange–correlation potential, which is the only unidentified parameter in the state-of-the-art formulism. The structural optimization, mechanical stability criteria, and tolerance factor ...
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In perovskite solar cells, the characteristics of the ETL have a great impact on the efficiency of the devices. The various doping and modified methods have been used to improve the carrier extract and transfer efficiency of ETL. Ln3+ ion-doping is a good way for ETL optimization, which ...