In this paper, we present numerical calculations based on the full potential augmented plane wave (FP-LAPW) method within the local density approximation (LDA) to study the optical properties of the ternary alloy AlxGa1-xN. The shape of the dielectric function, the refractive index, and the ...
However, nitride nanowires provide an option to study these properties unbiased by the presence of extended defects. The results reported by Pierret et al. (pp. 868–873) suggest that kinetical effects are governing the growth mechanism of AlxGa1–xN nanowires with high Al content, leading to...
The Al composition x is confirmed from the bandgap energy of Al xGa 1 xN layer deduced from CER spectra, and the built-in electric field in the barrier layer can be determined by analyzing the period of FKOs. It has been shown that the internal electric field in Al xGa 1 xN layer is...
The aim of my study is to investigate electronic and optical proprieties of the AlxGa1-xAs1-yNy thin layers utilized as quantum wells (QW) grown on GaAs substrates, applied for solar cells and vertical cavity surface emitting lasers (VCSELs), in order to design high efficiency solar cell ...
Optical properties of AlxGa1-xAs alloys A method is described for calculation of the real ( ε 1 ) and imaginary ( ε 2 ) parts of the dielectric function of semiconductors at energies below and ... S Adachi - 《Phys.rev.b》 被引量: 228发表: 1988年 Electronic structure and optical ...
MB Panish - 《Journal of Applied Physics》 被引量: 137发表: 1973年 Optical properties and ordering of AlxGa1xN MBE-layers To study the influence of the growth parameters on structural properties and crystal quality epitaxial layers of AlN and Al xGa 1− xN ( x=0–1) were gro... DG...
Al x Ga 1- x N CrystalElectronic StructurePropertiesBy making use of the density functional theory (DFT) of the first principles and generalized gradient approximation method, the electronic structures and properties of ideal GaN and AlxGa1-xN crystals (x = 0.25, 0.5, 0.75) have been ...
Phonon effects on electronic transport in single AlxGa1-xAs/GaAs heterojunctions We have studied the transport properties of an AlxGa1-xAs/GaAs single heterostructure using a Monte Carlo method, focusing in particular on the effect of t... P Bordone,P Lugli,M Gulia - 《Semiconductor Science ...
Hot-electron relaxation via optical phonon emissions in GaAs/AlxGa1-xAs quantum well structures: dependence upon the alloy composition and barrier width We present a systematic investigation of the dependence of the hot-electron-optical-phonon interactions on Al composition and barrier width in GaAs/...
The optical phonons in InxGa1-xAs exhibit two-mode behavior as in the case of AlxGa1-xAs. The force constants in terms of the alloy compositions were discussed.关键词: InxGa1-xAs AlxGa1-xAs random-element-isodisplacement compositions frequencies ...