and a better Z-parameter relative toAAs that produce nonfluorinated toluene sulfonic acid (Fig.8.27).Theseresults show fairly clear evidence that AAs that produce fluorinated acids givethe best combination of sensitivity,LER,and exposure latitude.Photoresists for EUV Lithography5293AA3HA3HBNo AA7.65...
The fabrication of such demanding nanometer multilayers needed, for instance, for EUV lithography is only possible if accurate metrology tools are routinely available which enable the immediate inspection of the layer properties. One of the most powerful techniques for the characterization of EUV and X...
1 EUV Lithography: An Historical Perspective 1 Hiroo Kinoshita and Obert Wood 1.1 Introduction 1 ...
Withintherealmofopticallithographythereexistsawidediversityofimplementationbothin wavelengthandopticalconfiguration.Wavelengthsrangefromthetraditionalvisibleand ultravioletrangesdowntoextremeultraviolet(EUV)andevensoftX-ray.Opticalconfigurations rangefromthesimplestcaseofdirectshadowcastingtocomplexmulti-elementrefractiveand/or...
Note that the NrInt10 value contains the effects of both peak height and width on the total throughput of the lithography machine. In our calculations, we aim to find the multilayer mirrors with the highest Peak1, as it provides the most substantial contribution to the throughput of EUV ...
SANTA CLARA, Calif. -- Optical lithography is expected to last until the end of this decade, pushing out the need for exotic, next-generation tools to about 2010, according to the new 2001 International Technology Roadmap for Semiconductors (ITRS).
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Reflective optical elements are used, for example, in EUV lithography instruments for the production of semiconductor components. In use, they are exposed to both an irradiation of up to 20 mW/mm2EUV intensity or more, and to a residual gas fraction of water, oxygen and hydrocarbons, as well...
专利名称：OPTICAL ARRANGEMENT FOR EUV LITHOGRAPHY 发明人：Anastasia GONCHAR 申请号：US17026925 申请日：20200921 公开号：US20210003926A1 公开日：20210107 专利内容由知识产权出版社提供 专利附图：摘要：An optical arrangement for EUV lithography, including: at least one component () having a main body ()...
The lithography apparatus is for example an EUV lithography apparatus, the working light of which is in a wavelength range of 0.1 nm to 30 nm, or a DUV lithography apparatus, the working light of which is in a wavelength range of 30 nm to 250 nm. ...