Exploration of Power Device Reliability using Compact Device Models and Fast Electro-Thermal Simulation This paper presents the application of compact IGBT and PIN diode models, including features such as local lifetime control and field-stop technology, to t......
The basic structure of a power MOSFET is a pn-junction giving forward blocking capability. In reverse operation the pn-junction is forward biased and the device operates as a conducting diode. Unfortunately this diode has a poor dynamic behaviour. This paper presents an approach to achieve the ...
The high-power operation of a diode edge-pumped, composite Yb<SUP>3+</SUP>-doped Y<SUB>3</SUB>Al<SUB>5</SUB>O<SUB>12</SUB> (Yb:YAG) microchip laser has been demonstrated. The novel hybrid composite microchip has a 5-mm-diameter, 300-µm-thickness, single-crystal Yb:YAG core ...
PowerSemiconductorDevices (e.g.MOSFETs;IGBTs;Diodes) Internal Parasitics Control Unit Power Supply GI1 GI2 A B L L L L INT INT EXT EXT EXT C C INT External Snubbers Figure0.5Powerelectronicswitchsystem Ontheonehand,theparametersofacompleteswitchresultfromtheswitchingbehaviourofthe ...
High-Power Operation Mode of Pulsed IMPATT Diodes. W. Behr,J. F. Luy. IEEE Electron Device Letters . 1990W BEHR,J.F LUY.High power operation mode of pulsed IMPATT diode. IEEE Electronics Letters . 1990W BEHR,J.F LUY.High power operation mode of pulsed IMPATT diode.IEEE Electronics ...
METHOD AND APPARATUS FOR IMPROVING THE PERFORMANCE OF A FUEL CELL ELECTRIC POWER SYSTEM 3. The power system of claim 1, further comprising: a transistor, wherein the Zener diode is electrical coupled to apply a signal to operate the transistor, wherein the second electrical short circuit path ...
A laser-diode-pumped Nd:Glass laser: mode-locked, high power, and single frequency performance The authors report the performance of a laser-diode-pumped Nd:glass laser. Using the AM active mode-locking technique, pulses as short as 9 ps were obtaine... Hughes,W D.,Phillips,... - 《...
CW diode-pumped microlaser operation at 1.5-1.6 μm in Er,Yb:YCOB We report efficient laser operation at 1.5-1.6 /spl mu/m in an Er,Yb:YCOB laser. The maximum output power of 110 mW was achieved in a hemispherical cavity ... P Burns,JM Dawes,P Dekker,... - 《IEEE Photonics Techn...
A photodiode includes a substrate having a first semiconductor type surface region on at least a portion thereof, and a second semiconductor type surface layer formed in a portion of the surface region. A multi-layer anti-reflective coating (ARC) is on the second semiconductor type surface layer...
High‐power operation of 830‐nm AlGaAs laser diodes We have developed a high‐power, semicylindrical‐shaped waveguide inner stripe laser diode (SCILD) using a current confinement structure. The ... K Shinozaki,A Watanabe,R Furukawa,... - 《Journal of Applied Physics》 被引量: 0发表: ...