52, NO. 8, AUGUST 2005 1727On-State Drain Current Modeling of Large-GrainPoly-Si TFTs Based on Carrier Transport ThroughLatitudinal and Longitudinal Grain BoundariesArgyrios T. Hatzopoulos, Dimitrios H. Tassis, Nikolaos A. Hastas, Charalabos A. Dimitriadis, Member, IEEE,and George Kamarinos...
What It Is: On-state drain current is ID with a specified VGS to bias the device to the on-state. The measurement is made in the ohmic (i.e. linear) region of the device. On the curve tracer the Collector Supply drives the drain and the Step Generator drives the gate. What The Di...
Since the subthreshold drain current is exponentially dependent on threshold voltage and it is also dependent on a square of intrinsic carrier concentration, we can see that a slight increase of threshold voltage can exponentially reduce the subthreshold drain current magnitude to a handsome proportion ...
Two additional factors that affect on-state resistance are junction temperature and drain current, as shown in these two plots from the NDS351AN datasheet: Thus, you may need to shop around and spend some quality time with a few datasheets before you find the right MOSFET for a particular ...
A semiconductor device includes a semiconductor substrate, a source region and a drain region formed in the substrate, a gate structure formed on the substrate disposed between the
The drain current is then ramped from the off-state to the on-state, and the locus of drain voltage is measured. This locus of drain current versus drain voltage provides a simple, unambiguous definition of the on-state breakdown voltage which is consistent with the accepted definition of off...
this work, the experimental tests are performed on the device C2M0080120D, which is a SiC MOSFET and exhibits the largest 𝑖𝑑/𝑖𝑑,𝑠𝑎𝑡id/id,sat among those considered, thereby representing the worst-case for the dependence of 𝑅𝑑𝑠,𝑜𝑛Rds,on on the drain current....
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In the traditional three-terminal arrangement (Figure 1a), the fast drain current transient during switching causes a voltage drop across the common parasitic inductance of the source bond-wires. This induced voltage is in opposition to the driving voltage, and consequently slows down the switching ...