The on-chip decoupling capacitor cell further includes an n-well extension that extends the n-well into the second transistor area, thereby providing a decoupling capacitor cell having reduced leakage compared to a CMOS capacitor cell, and increased capacitance per unit area compare with a ...
For example, some switches have very low on-resistance, while others offer low charge injection. The following discusses the key parameters of CMOS analog switches, their benefits and their suitability in many diverse applications. While no switch is perfect for all applications, a perfect switch ...
Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells. In: 2015 IEEE International Electron Devices Meeting (IEDM) (ed Suehle, J.) 10–12 (IEEE, 2015). Xu, X. et al. Fully CMOS compatible 3D vertical RRAM with self-aligned self-...
Off-state leakage currents have been investigated for sub-100 nm CMOS technology. The two leakage mechanisms investigated in this work include conventional off-state leakage due to short channel effects and gate leakage through ultrathin gate oxides. The conventional off-state leakage due to short ...
As the miniaturization trend of integrated circuit continues, the leakage currents flow through the dielectric films insulating the interconnects become a critical issue. However, quantum transport through the mainstream on-chip interfaces between interc
Higher drive strength is obtained by increasing the cut-through area of the CMOS channel, which causes more leakage. Increased I/O degree requires more complex switching logic where a smaller portion of the transistors are driving output loads. Hence the lower leakage power in ...
The low input voltage Vin = 0 turns T1 off and T2 on. The two transistors are never on or off simultaneously. Only a very small leakage current, the subthreshold current, may flow in steady state. Thus, in this quiescent state, no appreciable power is dissipated. The only power ...
Advanced Internet-of-Things applications require control-oriented codes to be executed with low latency for fast responsivity while their advanced signal p
tunnel currents through ultrathin layers (equivalent oxide thickness of less than 1 nm) of hBN and other 2D gate insulators, including the ideal case of defect-free hBN. Though its properties make hBN a candidate for many applications in 2D nanoelectronics, excessive leakage currents lead us ...
A subthreshold-leakage suppressed switched capacitor (SC) circuit based on a super cut-off CMOS (SCCMOS) scheme is introduced. This scheme realizes low-voltage SC circuits using low threshold voltage (V) transistors which are superior in drivability and are compatible with digital circuits. The SC...