Al/In x Ga 1−x As (001) diodes incorporating Si bilayers deposited under As or Al flux were fabricated by molecular-beam epitaxy on GaAs(001) wafers for 0.2 doi:10.1007/s11948-007-9023-8Ari Marcelo ...
O Efeito Disposi莽茫o na Ind煤stria Brasileira de Fundos de Investimento em A莽玫esThe goal of this study is to test the disposition effect, the tendency of investors to sell winning investments too soon and hold losing investments too long, by analyzing all Brazilian equity fu...
RELAO ENTRE CAPACITAO PROFISSIONAL DO GESTOR E DESEMPENHO DE FUNDOS DE INVESTIMENTO EM AESdoi:10.22478/ufpb.2318-1001.2023v11n1.62437BRAZILSHARPE ratioSTOCK fundsPANEL analysisEDUCATIONAL attainmentASSET-liability managementCAPITAL assets pricing model...