For normal operations, comparing flash devices that have normal erase functions with flash devices that should do write operations to erase memory cells, we get almost double of the number of write operations for the latter. Which means half of the life time expectancy. Proposed change The propos...
5 1 Publication Order Number: NTS4001N/D NTS4001N, NVS4001N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V...
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