The pin outs of the transistor 2N3904 are given in the following diagram. Applications The 2N3904 NPN transistor is a widely used general-purpose transistor with a wide range of applications. The following are some typical applications for this transistor: Amplification: In low-power audio, video,...
NPN Transistor Pinout The transistor has three leads; collector (C), Emitter (E), and Base (B). In most of the configurations, middle lead is for Base. To identify the emitter and collector pin, there is a dot on the surface of the SMD transistor. The pin which is exactly below th...
S8050 is one of the most commonly used semiconductor transistor models in circuit hardware design. Features • Power Dissipation:0.625W • Collector Current:0.5A • Collector-Base Voltage:45V Product Parameters Pin diagram : Detailed Photos Our Advantages why choo...
The 2N3904 is a through-hole mounting, NPN low-power, silicon planar switching transistor, TO-92 metal can package. This transistor has high-speed switching, so it is suitable for switches and amplifiers. Product Parameters Pin diagram :Package drawing...
MARKING DIAGRAM Y=Year WW=Work Week 2N492x=Device Code x = 1, 2, or 3 G=Pb−Free Package Device Package Shipping ORDERING INFORMATION 2N4921G TO−225 (Pb−Free)500 Units / Box 2N4922G TO−225 (Pb−Free)500 Units / Box 2N4923G TO−225 (Pb−Free)500 Units / Box 3 E...
S8050is aNPN transistorhence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. It has a maximum gain value of 400; this value determines the amplification capacity of...
Schematic &Pin Configuration Mechanical Characteristics Maximum Ratings @T A =25°C unless otherwise specified ∙Low saturation Voltage(Transistor):V CE(sat)=0.3V(Max.);I C =150mA,I B =15mA Fast Reverse Recovery Time(Diode)∙Capable of 350mWatts of Power Dissipation ∙Operating and ...
3 1 http://onsemi.com NPN Transistor with Dual Series Switching Diode 654 D1 Q1 D2 123 654 1 23 SC−74 CASE 318F MARKING DIAGRAM 3NP MG G 3NP = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary ...
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE 1 EMITTER 3 4 123 SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM AYW XXXXXG G 1 XXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be ...
R1 = 4.7 k W, R2 = 47 k W NPN Transistors with Monolithic Bias Resistor Network MUN5233DW1,NSBC143ZDXV6,NSBC143ZDP6 This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single ...