In subject area: Computer Science An NPN transistor is a type of bipolar junction transistor where the majority current flow involves electrons. It consists of an emitter, a base, and a collector, with the input junction forward-biased and the output junction reverse-biased. ...
In the CE (common emitter) amplifier composed of NPN transistor, when the input signal is a sinusoidal waveform of 1 kHz and 5 mV, the output voltage waveform has a distortion of bottom flattening. This distortion is ( ). A、saturation distortion ...
GENERAL PRINCIPLES A bipolar transistor is an electronic component com- posed of three alternating p-doped and n-doped semi- conductor layers called the base B, the collector C and the emitter E. The base is between the collector and emit- ter and is used to control the transistor. In pri...
MMBT2222A NPN TRANSISTOR Features 1.Epitaxial planar die construction 2.Complementary PNP Type available(MMBT2907A) Dongguan Merry Electronics Co., Ltd. was established in 2013 as a professional supplier of semiconductor discrete device sales and technical services. The core management team has many yea...
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PROBLEM TO BE SOLVED: To regulate the parameters of a transistor accurately and independently from fluctuation of fabrication parameters by making an opening into art epitaxial layer at a size and depth at least equal to the thickness of a thick oxide.イヴォン グリ...
CE3512K2 Integrated circuit IC Chip 2023 NPN Transistor MOS diode original Electronic Micr Components CE3512K2 No reviews yet Shenzhen Chenxinhong Electronics Co., Ltd.6 yrsCN Previous slideNext slide Previous slideNext slideKey attributes Other attributes Place of Origin Guangdong, China Brand Name...
产品种类 双极晶体管 - 双极结型晶体管(BJT) RoHS 是 安装风格 Through Hole 封装/ 箱体 TO-92-3 晶体管极性 NPN 配置 Single 集电极—基极电压 VCBO 500 V 发射极 - 基极电压 VEBO 6 V 集电极—射极饱和电压 0.75 V 最大直流电集电极电流 0.3 A Pd-功率耗散 625 mW 最小工作温度 - ...
Type:Field-Effect Transistor;Part Number:SS8050;Transistor Type:NPN;Current - Collector (Ic) (Max):1.5A;Voltage-Collector Emitter Breakdown(Max):25V;Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA;Current - Collector Cutoff (Max):100nA (ICBO);DC Current
Output Mode Emitter Alarm output, transistor PNP/NPN for selecting; output current<150mA(30V DC) Receiver 2 OSSD output, PNP NC , short-circuit protection, Cross circuit monitoring, output current <200mA(30V DC) Indicator See indicator instruction Response time 3.2~51.2ms(o...