管压降VCE(sat) Collector-Emitter Saturation Voltage 300mV/0.3V 耗散功率Pc Power Dissipation 2W Description & Applications Medium Power Transistor (25V, 1.2A) Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC...
Transtion Frequency(fT)140MHz 直流电流增益hFE DC Current Gain(hFE)250~400 管压降VCE(sat) Collector-Emitter Saturation Voltage150mV/0.15V 耗散功率Pc Power Dissipation200mW/0.2W Description & ApplicationsAudio Frenquency Power Amplifier NPN Silicon Transistor Mini Mold micro package; high DC current ga...
This is 50V, 150mA, Silicon NPN Epitaxail Type Transistor.C1815 transistoris a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits. : Features 1. High voltage...
Npn型晶体管基准电压产生电路 Npn-type transistor reference voltage generating circuitdoi:CN102289242 ANPN型晶体管基准电压产生电路,本发明所属技术领域为NPN型晶体管参考电压产生的方法及NPN型晶体管参考电压产生电路. NPN transistor reference voltage generating circuit, the method technique of the present ...
Generally, the conduction and disconnection of the transistor are controlled by controlling the base voltage Ub of the transistor. II. Methods of distinguishing NPN transistors and PNP transistors 1. Identifying Base B Set the digital multimeter to the diode position, connect the red test lead to ...
ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector ...
The base terminal is connected to the positive terminal of base supply voltage VBwith base resistance RB. The base resistance is used to limit the maximum base current. When switched ON, the transistor allows a large collector current to flow, driven by a smaller base current entering the base...
This is a powerful transistor that can be used in a wide range of electronic circuits for power amplification applications. Its high power and voltage handling capabilities, as well as its high gain, make it suitable for use in high-power audio amplifiers, power supplies, and motor control cir...
Thus, when the transistor is used as an amplifier and the input current varies over a typical range (10–1), the base-emitter voltage varies only little about 0.7 V. These concepts will become clearer when we consider transistor amplifiers. There is no significant difference in the operation ...
Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 12 W Maximum Collector-Base Voltage |Vcb|: 36 V Maximum Collector-Emitter Voltage |Vce|: 18 V Maximum Emitter-Base Voltage |Veb|: 4 V Maximum Collector Current |Ic max|: 1 A Max. Oper...