楼上说的没错,管子换了,原理相同。 一般电压方式bandgap(如果不是brokaw原始设计,电压可以被抬高),输出电压一般是VBE加若干个热电压VT,大致1.2v多一些。 如果用电流模式bandgap,输出可以比较低。 谢谢你的帮助 申明:网友回复良莠不齐,仅供参考。如需专业解答,请学习本站推出的微波射频专业培训课程。
NPN bandgap voltage generator 专利名称：NPN bandgap voltage generator 发明人：Mark S. Birrittella,Robert R. Marley,Keith D.Nootbaar 申请号：US06/761207 申请日：19850731 公开号：US04628248A 公开日：19861209 专利内容由知识产权出版社提供 摘要：An all NPN bandgap voltage reference is provided that ...
在CMOS工艺中,也就是n-well的厚度,是较大的,因此β会很小,然而这个厚度是我们designer不可控的,是由foundry决定的。 到现在为止,作为模拟IC设计师,我只在bandgap中用过BJT,而且用的也不是其对基极电流的放大作用,而是两个BJT的Vbe差值与温度成正比这个特性,如下图。 PTAT电压产生电路 mentor说,在ESD电路中,基...
An all NPN bandgap voltage reference is provided that includes a Widlar type temperature coefficient compensation circuit. A pair of NPN differentially connected transistors maintain a constant current in the Widlar circuit over variations in power supply voltage V.sub.EE while causing an increase in ...
Methods and apparatus for a PTAT reference in a fully isolated NPN-based bandgap references are disclosed. A disclosed method to form a bandgap reference comprises generating a first current that is constant over a change in temperature, generating a second current that is complementary-to-...
0.18um及以下mixed-signal 工艺里面的npn, 绝对精度和相对精度(匹配度)能比得上标准cmos工艺里面的寄生pnp吗? 如果像bi-cmos工艺一样,用来做bandgap的话效果如何啊? 请高手指点,谢谢! 估计差不多吧,不过多了一个DNW而已。 漫长的等待。 继续等待 以相同面積來說npn本身結構Q值上比pnp還要差 ...
Effect of bandgap discontinuity on the cut-off frequency, base transit time and junction capacitance of npn AlGaAs/GaAs heterojunction bipolar transistors OMAR QASAIMEH YOUSEF ZEBDA Pages 25-36 | Published online: 10 Nov 2010 Cite this article https://doi.org/10.1080/002072198134968 References Ci...
LDO Voltage Regulator, 30 mA, Adjustable 0.45 V to 0.9 V Output LDO Voltage Regulator, 250 mA, Adjustable 0.45 V to 0.9 V Output Analog Front End: 2x 12-bit 4 GSPS IQ ADCs, 2x 12-bit 8GSPS IQ DACs, bandgap, temp sensor, PLL, 4 x LDO ...
大电阻是用来偏置的,让反相器偏置在VIN=VOUT的地方,斜率最大,也就是,增益最大。 能不能震荡其实有很多判断标准,不一定需要NPN加电感的。放大器和晶体谐振是另一个模式。给个gm我就振呀,呵呵。 正解,从模拟的角度来看inverter说白了就是一个p/n parallel common source amp ...
Calculation shows that the effect of a high level of electron injection to the base on the base transit time is less effective for an abrupt bandgap emitter than that for a graded-gap emitter HBT.OMARQASAIMEHYOUSEFZEBDAInformaworldInternational Journal of Electronics...