Statistics of normally dis- tributed initial imperfections [J]. International Journal of Solids & Structures, 1993, 30(18): 2445-2467.Ikeda, K. and Murota, K. (1993), "Statistics of normally distributed initial imperfections", Int. J. Solids Struct. 30(18), 2445-2467...
a买一只宠物狗 Buys a pet dog[translate] a一定还有别的方法 Certainly also has other method[translate] astatistics for the average (mean) hours that people aged 21–40 sleep would be normally distributed 正在翻译,请等待... [translate]
Satorra-Bentler's corrected statisticssmall sample sizetest statistic(2017). Four New Corrected Statistics for SEM With Small Samples and Nonnormally Distributed Data. Structural Equation Modeling: A Multidisciplinary Journal. Ahead of Print. doi: 10.1080/10705511.2016.1277726...
A Normally Distributed Soil Physical Measurements and Nonparametric Statistics - McIntyre, Tanner - 1959 () Citation Context ...e the assumption of a known underlying distribution. As deviation from normality increases, the efficiency of parametric tests decreases, but the efficiency of nonparametric ...
Selected tables in mathematical statistics, vol. VII. Providence, RI: American Mathematical Society; 1981.Meeker, W. Q., Cornwell, L. W., & Aroian, L. A. (1981). Selected tables in mathematical statistics: The product of two normally distributed random variables. Providence: American Mathema...
Estimating common parameters of lognor- mally distributed environmental and biomonitoring data: Harmonizing disparate statistics from publications. Journal of Toxicology and Environmental Health B 17 341-68. doi:10.1080/10937404.2014.956854.Pleil J. D., Sobus J. R., Stiegel M. A., Hu D., ...
thereby improving the device’s performance and reliability. Au is highly resistant to oxidation, meaning the metal gate is less prone to oxidation during long-term usage. This contributes to the device’s longevity and stability. The common choices of the metal for the gate field plate are Ni...
A clear reduction in output current is visible when increasing the gate trench width (i.e., the trench bottom), meaning the total lateral resistance Rtot should increase as well with this parameter. Thus, in Figure 5b, a visible linear dependence of the total lateral resistance on the gate...
Therefore, the activation energies of the trap level applied to the TCAD simulation were distributed uniformly through the bandgap of GaN. As negatively charged traps were applied, the vertical electric field of the gate dielectric under the gate was significantly decreased by 83%. CET maps and ...