Non Volatile Random Access Memory 非挥发性内存(=NVRAM)在计算机系统当中,一旦电源消失,资料不会流失的内存(Memory)。 non volatile semiconductor memory 不挥发性半导体存储器 random access memory 随机读取存储器,内存 Random Access Memory 随机存取内存(=RAM)随机存取内存是内存的一种,由计算机CPU控制,是计算...
a服装试穿报告 The clothing tries on the report[translate] aFalls into the emotion abyss 分成情感深渊[translate] a蓝血 Blue blood[translate] a我只是你可以和我過好生活 I only am you may with my good life[translate] aNon-volatile random-access memory 无挥发性的随机存取存储器[translate]...
非易失性随机存取存储器（Non-Volatile Random-Access Memory，简称 NRAM）是一个重要的计算机存储术语。这个缩写词代表了那些即使断电也能保持数据的存储器类型，它们允许设备在不供电的情况下暂时存储信息。NRAM 的中文拼音为 "fēi yì shī xìng suí jī cún qǔ cún chǔ qì"，在计算机科学领域...
NVRAM 非易失性随机访问存储器 (Non-Volatile Random Access Memory),是指断电后仍能保持数据的一种RAM。 如果通俗地解释非易失性存储器,那就是指断电之后,所存储的数据不丢失的随机访问存储器。 之所以加如此的定语,是因为: 1.与此对应的随机访问存储器(Random Access Memory,RAM)包含SRAM和DRAM(其又分为SDRAM...
一种用以操作具有多个存储单元,而各单元都具备一个电容器和一个具有浮动栅极的晶体管的非挥发性动态随机存取存储器(NVDRAM)的方法,包括下列步骤:(A)准备用以执行DRAM操作的电源激活模式;及(B)准备用以保持存储在存储单元中的数据的电源关闭模式. A method for operating having a plurality of memory cells and ...
Non-volatile random access memory device and data read method thereof A non-volatile random access memory device according to the present invention includes a plurality of data cells; a plurality of reference cells for providing sensing standards for a data cell selected among the data cells; and...
A non-volatile dynamic ram element utilizes a conventional random access memory element in combination with a non-volatile semiconductor memory element. The ram element (23, 24, 25) and memory element (27, 30, 31) may be isolated from one another by electrode 28, the memory element being ut...
These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from ...
The gap between the latencies is the target for “Storage Class Memory” (SCM). Some designs of SCM or non-volatile memory with low latency can compete with DRAM: one type is MRAM (Magnetoresistive Random-Access Memory). Other technologies have latency between DRAM and SSD, such as PCM (...
These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from ...