static noise marginSNMvariabilityAn analytical model of the static noise margin (SNM) for a 6T CMOS SRAM suitable for use in investigating the effect of random Vvariation is derived. A three-step approach using characteristic points of the half cell inverter's transfer curve is developed. ...
It should be noted, however, that since the CMOS output is driving another CMOS device then the current drawn from the output is small. Hence the output voltage levels for a CMOS device will be much closer to the supply than indicated in Table 9.1 resulting in an even larger noise margin...
Noise Margin Low(NML)和Noise Margin High(NMH) NML的物理意义是:可将逻辑“0”破坏的最小噪声,当系统噪声小于NML时,逻辑“0”不会被破坏。 同理,NMH的物理意义是:可将逻辑“1”破坏的最小噪声,当系统噪声小于NMH时,逻辑“1”不会被破坏。 故NML与NMH如图所示 VLSI:Noise Margin (噪声容限) - 小白王云...
This paper examines the factors that affect the Static Noise Margin (SNM) of a 6T Static Random Access Memory (SRAM) cell designed in 90-nm CMOS. In this paper, the SRAM cell is simulated and noise margins are obtained while varying several parameters that affect SRAM operations. These para...
We show in this paper that it is better to use an unequal division of the range to define the resistance state corresponding to a given logic state. We show how this division can be optimized to provide the highest noise margin. 展开 ...
摘要: CiteSeerX - Scientific documents that cite the following paper: Noise margin and noise immunity of logic circuits 会议时间: 1968 收藏 引用 批量引用 报错 分享 全部来源 求助全文 citeseer.uark.edu:8080 相似文献Understanding DC Behavior of Subthreshold CMOS Logic Through Closed-Form Analysis M....
Noise marginRead stabilityPre-chargeLow powerA new memory design with a simple six-transistor memory cell achieves an enhanced read static noise margin. Based on using "pre-equalize" rather than "pre-charge" at the beginning of a read operation, the cross-coupled inverters of the memory cell ...
Static-noisemarginanalysisofMOSSRAMcellsESeevinck,FJList,JLohstroh-Solid-StateCircuits,IEEEJournalof,1987-ieeexplore.ieeeSRAMLeakageSuppressionbyMinimizingStandbySupplyVoltageHQin,YCao,DMarkovic,AVladimirescu,JRabaey-log-ieeexplore.ieeeAlowpowerSRAMusingauto-backgate-controlledMT-CMOSKNii,HMakino,YTujihashi...
Worst-case static noise margin criteria for logic circuits and their mathematical equivalence Various criteria have been formulated in the past for analytically calculating the worst-case static noise margins of logic circuits. Some of these criteri... J Lohstroh,E Seevinck,J De Groot - IEEE ...
noise margin Wikipedia (electronics) The voltage difference between the guaranteed output level and the required input voltage level of alogic gate. This article is provided by FOLDOC - Free Online Dictionary of Computing (foldoc.org) Want to thank TFD for its existence?Tell a friend about us, ...