Noise in sub-micron CMOS image sensors CMOS image sensors are devices that convert illumination signals (light intensity) into electronic signals. The goal of this thesis has been to analyze dominate noise sources in CMOS imagers and to improve the image quality by reducing t... X Wang - 《...
This makes necessary the successful implementation of Single Photon Avalanches Diodes (SPAD) on deep sub-micron processes. This work presents the design and characterization of SPADs fabricated in a 110nm CMOS Image Sensor technology. These devices are characterized by a remarkably low dark count ...
Therefore, TR-STXM using asynchronous excitation allows for shot-noise limited dynamic imaging, as demonstrated in Figure 3. Figure 3. Example image of a pump-and-probe measurement showing the advantages of the synchronization scheme used, see also Ref. [37]. A snapshot of rotating domains in...
“Progress in CMOS Active Pixel Image Sensors” in Proceedings of SPIE vol. 2172, San Jose, CA, Feb. 1994. A. El Gamal et al. “Modeling and Estimation of FPN Components in CMOS Image Sensors” in Proceedings of SPIE vol. 3301, San Jose, CA, Jan. 1998. T. Nobusada et al. ...
A CMOS image sensor with pixel-parallel analog-to-digital (A/D) conversion fabricated with different array sizes and photodiode types in a three-metal 0.5-/spl mu/m process is presented. Nominal power dissipation is 40 nW per pixel at V/sub DD/=3.3 V. A/D conversion results from sampli...
CMOS; terahertz direct detection; terahertz imaging; sub-millimeter wave detectors; sub-millimeter wave imaging; N-path; bandpass filter; high-Q; inductorless filter; Gm-C; tunable; low noise Graphical Abstract 1. Introduction The demand for terahertz (THz) detectors with the capability of ...
CMOS; terahertz direct detection; terahertz imaging; sub-millimeter wave detectors; sub-millimeter wave imaging; N-path; bandpass filter; high-Q; inductorless filter; Gm-C; tunable; low noise Graphical Abstract 1. Introduction The demand for terahertz (THz) detectors with the capability of ...
This paper presents the design, implementation and characterization results of a pixel-level readout chain integrated with a FET-based terahertz (THz) detector for imaging applications. The readout chain is fabricated in a standard 150-nm CMOS technology