Remark 1 When the service arrival rate r and the tolerable delay upper limit t follow a uniform distribution in the intervals [rmin,rmax] and [tmin,tmax], respectively, the expectation of N r,t J,i can be expressed as E h N r,t J,i i = 7 2 ϑ. (19) The variance of N r...
Therefore, to understand the activity of the nanocluster, it is necessary to model a nanocluster surrounded by well-defined facets. The nanocluster with octahedral shape is one of the most stable forms due to its high symmetry52,53. In fact, the Ni(111) surface is mainly observed in the ...
After the nanofibers were annealed at 450 °C, the average diameter of nanofibers shrunk to 189 nm because of the decomposition of the polymer. The average diameter promotes to 303 nm when the calcined temperature reaches to 600 °C. This phenomenon could be ascribed to the particle ...
(CoFe2O4) nanospheres covered with a graphitic carbon (GC) layer were feasibly and effectively synthesized. A facile pitch solution infiltration method had been used to produce electrical conductivity when you look at the tube-in-tube construction. Generally speaking, mesophase pitch with liquid ...
including insulation forming part of a component, it shall at least consist of either - two layers of thin sheet material, each of which shall pass the electric strength test below, or - one layer having a distance through insulation of at least 0,4 mm, which shall pass the electric stren...
Eventually, progenitors that remain in the apical layer generate the apically located sustentacular (glial-like) support cells [28]. The neuro-basal layer consists of rounder, more densely spaced nuclei that correspond to basal progenitors and to their progeny, the intermediately located neurons. ...
Expression was detected only in the outer cell layer of the integument and was first visible after the emergence of the integument (Fig. 2b, c). Expression was low or absent from the few cells at the distal tip of the integument (Fig. 2 all stages), and also absent from integument ...
31-32 - III-N Technology Surface state of GaN after rapid-thermal- annealing using AlN cap-layer G. El-Zammar a, W. Khalfaoui a, T. Oheix a, b, A. Yvon b, E. Collard b, F. Cayrel a, D. Alquier a a Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue ...
DC head was used to sputter a thin Cr layer of 8 nm thickness at 250° C as a wetting layer, after that, RF head was used to deposit 90 nm of Au layer at room temperature. Interdigitated electrode (IDE) patterns were fabricated using XT-Laser 50 W near-Infrared 1064 nm Q-...
Dynamic characteristics, such as response time, τres, defined as the time required for the sensor resistance to reach 90% of the equilibrium value after NO2 is injected, and recovery time, τrec, taken as the time needed for the sensor resistance to reach 90% of the baseline value in ...