Since the inverter is the main building block in digital design, in this paper, the analysis of the RTD-loaded NMOS inverter is addressed quantitatively with its static and dynamic characteristics investigated and compared with that of the conventional static CMOS inverter. Specifically, compact-form...
Transient Analysis of NMOS inverters • The source of capacitance CT2 and CT3 are the transistor input capacitances and parasitic capacitances due to interconnect lines between the inverter stages. • The constant current over a wide range of VDS ...
Break-before-make CMOS inverter for power-efficient delay implementation In almost all designs, the logic swing of DRMCML circuits is taken as [DELTA]V < [V.sub.th], this is because the NMOS transistor [N.sub.1] can operate at saturation region. Near-threshold computing and minimum supply...
4. The circuit of claim 3, wherein the static CMOS circuit comprises an inverter. 5. An integrated circuit, comprising: a first input connection for receiving a clock signal; a second input connection for receiving an input data signal; and a domino logic circuit coupled to receive the input...
differentRCvaluesandinverterstructureontheESDperformanceswerespeciallyinvestigated.Thead- vantageofthechannel-dischargedevicewasstudiedinsomespecialapplications.Throughaseries measurementandanalysisoftheESDtestingcircuits,itwasprovedthattheperformanceoftheESDcir- ...
NMOS inverterNMOS transistorVTC characteristicsThreshold voltageCritical voltagesNoise marginsNMOS transconductance parameterThe objective of this paper is to show the influence of the parameters that characterize the NMOS transistors on the behavior of NMOS inverters in static operation mode, as well as ...