"FinFET scaling to 10 nm gate length." In Electron Devices Meeting, 2002. IEDM'02. International (pp. 251-254). IEEE.B. Yu et. al., "FinFET scaling to 10 nm gate length", IEDM 2002.B. Yu, L. Chang, S. Ahmed, H.
Ultra-scaled transistors are of interest in the development of next-generation electronic devices1–3. Although atomically thin molybdenum disulfide (MoS2) transistors have been reported4, the fabrication of devices with gate lengths below 1 nm has be
这里需要提到一点,在FinFET商业化应用之前,芯片工艺大多还是按照晶体管真实体积大小来区分的。1992年,IEEE发布集成电路工艺命名规则,根据晶体管的Gate Length和Half-pitch Size来命名制程。Gate Length表示二极管Gate极的宽度,而Half-pitch Size代表的是芯片内部互联线间距离的一半,即光刻间距的一半。 FinFET突破了晶体管...
We further scaled the gate length down to 30 nm to explore the CGP scaling-down potential of full-contact aligned CNT FETs. Figure4ademonstrates that the isolation spacing between two FETs can be scaled to 32 nm, which is much smaller than the shallow trench isolation region (~200 nm...
从技术水平来看，英特尔的14nm工艺在栅极距（gate pitch）、鳍片间距（fin pitch）、金属栅距（metal ...
虽然,N3的接触式栅极间距(Contacted Gate Pitch, CGP)为 45nm,是迄今为止最密集的工艺,领先于Intel 4的50nm CGP、三星4LPP的54nm CGP和台积电 N5的51nm CGP。但是 SRAM 密度仅5%的提升,意味着 SRAM设计复杂度会增加,导致成本成本显著增加。并且N3的良率和金属堆叠性能也很差。
在28纳米/22纳米之前,晶体管的形状为“平面型(Planner)”,16纳米以后为FinFET,2纳米以后为GAA(Gate-All-Around,全环绕栅极晶体管),之所以有这么大的变化,是因为不改变晶体管结构,无法实现人们期待的性能。此外,随着微缩化发展,出现的问题也是各式各样。 比方说,在2015年之前以为被视为“微缩化头号玩家(Top ...
在28纳米/22纳米之前,晶体管的形状为“平面型(Planner)”,16纳米以后为FinFET,2纳米以后为GAA(Gate-All-Around,全环绕栅极晶体管),之所以有这么大的变化,是因为不改变晶体管结构,无法实现人们期待的性能。此外,随着微缩化发展,出现的问题也是各式各样。
(FETs), with short-channel control (SSSAT=66-68mV/dec) comparable to gate-all-around (GAA) nanosheet devices down to 22nm gate length. Dual work function metal gates are integrated at 17nm spacing between n- and pFETs, highlighting the key benefit of forksheet devices ...
www.nature.com/scientificreports OPEN received: 22 January 2015 accepted: 18 May 2015 Published: 06 July 2015 The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility Wen Yang1,2, Qing-Qing Sun1,2, Yang Geng1,2, Lin Chen1,2, Peng ...