An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic ...
Table I.Periodic table of metal nitrides. 1234567891011121314 Li3NBe3N2BN Na3NMg3N2AlNSi3N4 K3NCa2NScNTi2NV3NCr2NMn4NFe16N2Co4NNi4NCu3NZn3N2GaNGe3N4 Ca3N2TiNV2NCrNMn2NFe4NCo3NNi3N Ca11N8VNMn3N2Fe2-3NCo2NNi2N Ca3N4Mn6N5Fe2NCo3N2Ni3N2 ...
The present invention relates to a sintered body for chip forming machining containing at least one hard constituent comprising a carbide, nitride and/or carbonitride of a metal of group IVB, VB or VIB in the periodical system and a binder metal based upon Co, No and/or Fe, in which the...
An example of the element Silicon Sample Image|Spin Video|QuickTimeVR Rotation Silicon nitride skateboard bearing. Source:eBay seller irvineman Contributor:Theodore Gray Acquired:24 March, 2009 Text Updated:25 March, 2009 Price:$60 Size:0.75" Composition:SiN...
The aluminum nitride sintered body contains a group IIa or IIIa element in the periodic table or a compound thereof and silicon or a silicon compound of 0.01 to 0.5 percent by weight in terms of the silicon element, and preferably further contains a group VIII transition element or a compound...
For nitride films, those with heavier metal atoms such as Hf and Ta, showed lower work function. The work function depended upon the Period to which the metal atom belongs in the periodic table. 展开 关键词: Compound-target-sputtering Transition metal nitride Transition metal carbide Work ...
O<Sub>2</Sub> calculated as SiO<Sub>2</Sub> on the surface of the sintered body containing specific Si<Sub>3</Sub>N<Sub>4</Sub> and SiC to the amount of elements of IIIA group in the periodic table calculated as their oxides to a higher level of that inside the sintered body. ...
Generally, EXAFS cannot distinguish the coordinated C and N atoms, because they give similar scattering parameters due to their neighboring positions in the periodic table of elements. Several previous works reported the preferential coordination of Pd atom to nitride rather than carbon when palladium ...
FIELD EFFECT TRANSISTOR OF SEMICONDUCTOR FORMED FROM NITRIDE OF AN ELEMENT BELONGING TO GROUP-III ON THE PERIODIC TABLE Provided is a semiconductor device which can reduce the contact resistance, has a small current collapse, and can improve the pinch-off characteristic upon a high-frequency operatio...
Thehexagonal boron nitride(h-BN) is a kind ofpureman-made material composed of B and N. B, C, and N are adjacent elements in periodic table of elements, which are similar in many aspects. For example, their atomic radiuses are approximately equal and they are also isoelectric. The hexag...