The optical properties of nickel film, in particular spectral reflectance and absorbance, showed dramatic change during various stages of nickel silicide formation. Strong diffraction was observed from the patterned wafers. Microscopic reflectance and absorbance variation was observed from the patterned ...
Nickel silicide formation during the annealing of very high dose (≥4.5×1017ions/cm2) Si implanted Ni has been investigated, using ion beam analytical techniques, electron microscopy, and x‐ray diffraction analysis. An initial amorphous Si–Ni alloy, formed as a result of high dose ion implan...
In this respect, we developed a two-step organometallic approach for nickel silicide formation under near-ambient temperature. Transmission electron and atomic force microscopy show the formation of a homogeneous and conformal layer of NiSi x on pristine silicon surface. Post-treatment decreases the ...
Hatalis, "Preparation and stability of low temperature cobalt and nickel silicides on thin polysilicon films", J. Vac... MC Poon,F Deng,H Wong,... 被引量: 0发表: 1997年 Reaction of Amorphous Silicon with Cobalt and Nickel Silicides Before Disilicide Formation Sarcona, S.K. Saha, and...
We show that the contact annealing temperature for the thermal formation of the nickel silicide (NiSix) after the electroless Ni plating has a significant influence on the NiSix layer thickness. Increasing the temperature from 300 to 450 °C shifts the average thickness to higher values and ...
crystallization anneal of the sputter-deposited TiNi, and consists of several phases: Ti2Ni, a nickel silicide, and a ternary titanium nickel silicide. Th... S Stemmer,G Duscher,C Scheu,... - 《Journal of Materials Research》 被引量: 56发表: 1997年 Low-Temperature Formation of Epitaxial Ni...
The transformation to a low resistivity nickel silicide is affected by the temperature at which annealing occurs. In order to fully convert Ni2Si to NiSi, annealing typically must occur at 400° C. or greater. However, the higher annealing temperatures result in rough interfaces between the nicke...
In both cases the silicide phases stayed well separated, with no evidence of tertiary compound formation. The growth rate of CrSi 2 on epitaxial PtSi was found to be nearly 30% slower than that on non-epitaxial PtSi, whilst the activation energy for CrSi 2 formation on NiSi and PtSi was ...
Aluminum‐silicide reactions. I. Diffusion, compound formation, and microstructure A thin tungsten layer between Al and the silicide proved to be effective as a diffusion barrier below 500°C, at which temperature WAl12was formed. ... V Gurp,J G. - 《Journal of Applied Physics》 被引量: ...
Additionally, the rectangular precipitates were elongated along the surface of the substrate as the annealing time increased. Thus, the formation of the precipitate proved to be anisotropic. 展开 关键词: Nickel silicide Ion beam synthesis Annealing ...