BAND gapsNICKELBORONDENSITY of statesNITRIDESWe have studied the electronic and magnetic properties of Nickel doped hexagonal boron nitride (h-BN) by using spin polarized density functional theory (DFT) method of calculations within DFT-D2 approach. The calculations have shown that Nickel doped in ...
29 Although high solar-to-hydrogen (STH) efficiency >25% is estimated for tandem-based light absorbers when Si is integrated with 1.6–1.8 eV band gap materials,30,31 an additional complicated buried junction is necessary to minimize charge recombination and facilitate charge transfer.32 In terms...
Dicalcium nitride as a two-dimensional electride with an anionic electron layer. Nature 494, 336–340 (2013). Article ADS CAS PubMed Google Scholar Matsushita, Y.-i, Furuya, S. & Oshiyama, A. Floating electron states in covalent semiconductors. Phys. Rev. Lett. 108, 246404 (2012). ...
The band gap value of the metal tungstate can be adjusted when coupled to other semiconductors [110]. This synergistic effect increases overall catalysis and improves the efficiency of Summary and outlook In the era of sustainable development, the pursuit of green and clean energy sources has ...
Hybrid Graphene and Graphitic Carbon Nitride Nanocomposite: Gap Opening, Electron–Hole Puddle, Interfacial Charge Transfer and Enhanced Visible Light Response. J. Am. Chem. Soc. 134, 4393, 10.1021/ja211637p (2012). Article CAS PubMed Google Scholar Xu, L. et al. Insights into Enhanced ...
Ni nanoparticle on a graphene substrate, inside the fullerene and carbon nanotube was studied by molecular dynamics simulation technique. Morse interatomic potential have been used for Ni-Ni and Ni-C interactions, and AIREBO potential has been used for C
In this research work, nickel dioxide (NiO2) with a fixed quantity of graphitic carbon nitride (g-C3N4) and various concentrations of yttrium (Y) (2, 4 wt%) were synthesized via the coprecipitation method. The main objective is to degrade hazardous dyes such as Rhodamine B (RhB) with ...
Band gap energy (Eg) was determined utilizing Tau’s plot to be 2.81, 2.75, and 2.71 eV for NiS2 annealed at 6, 12 and 24 h, correspondingly (Fig. 3(b)) [40]. The decrease in Eg could be attributed to the formation of oxygen vacancies or the quantum confinement effect of...
The UV–Vis spectrum of this sample shows a broad peak at 470 nm (∼2.6 eV). This energy is lower than the NiO band gap (3.5–4 eV) which indicates electron-hole pairs cannot be created by NiO. Therefore, the SPR effect of Ni nanoparticles is the only possibility to create hot ...
Cadmium sulfide (CdS), an attractive semiconductor sensitive to visible light, has been extensively stud- ineedgafotirveHc2oenvdoulucttiioonn due to its narrow band gap and favorable band band potential of CdS makes it photoinstability, structure5–7. However, which is usually due to the ...