The annealing effects of GaN and GaP in PH 3 and NH 3 , respectively, are investigated, and metalorganic chemical vapor deposition (MOCVD) growth of GaP on GaN and GaN on GaP was performed. The following results are obtained: N atoms are introduced into GaP by the annealing in NH 3 at...
GaP:N layersThe kinetics of Si incorporation in the Ga melt during the LPE growth the GaP layers doped with nitrogen have been studied both experimentally and theoretically. The calculations show that the concentration of Si in the melt is kinetically controlled and that the time required for ...
Abstract The electronic structure of IV2V2VI class semiconductors, C2N2X (X = O, NH, CH2), was investigated using first principles calculations. The crystal structures of C2N2X are isostructural with the Si2N2O compound, sinoite. The valence of the X atom is virtually two, and thus...
The incorporation of N in GaP liquid phase epitactic layers using NH 3 vapour doping has been studied at different H 2 partial pressures in argon gas. It is shown that the incorporation of N in different ambients is conveniently described by just one parameter. The reaction of NH 3 with ...
gappassivationsingle crystal(NH4)(2)S-xXPSSCANNING-TUNNELING-MICROSCOPYINP(001)GaP(0 0 1), (1 1 1)A, and (1 1 1)B surfaces treated by (NH 4) 2S x solution have been studied by high-resolution X-ray photoelectron spectroscopy (XPS). The surfaces etched by acid solution have small ...
Two microporous zinc–gallium phosphates (CN3H6)[ZnGaP2O8] (I) and (C4NH10)[ZnGaP2O8] (II) have been synthesised under solvothermal conditions in the presence of guanidinium chloride and pyrrolidine respectively. The structure of (I) has been determined by single-crystal X-ray diffraction ...
A GaP(0 0 1) surface treated by S 2C1 2 and P 2S 5/(NH 4) 2S x solutions has been investigated by AES and XPS. The amount of sulfur on the surface treated by the P 2S 5/(NH 4) 2S x solution is more than that by the (NH 4) 2S x. The sulfur coverage on the S 2Cl...