Single Event Upset cross-sectionschip thresholdsthermal neutron fluenceNeutrons from a reactor and from a cyclotron have been used to characterise the CMS Resistive Plate Chambers (RPCs) front-end chip to neutron-induced damaging events. Single Event Upset (SEU) cross-sections have been measured up...
Neutron_SEU_FAQ Neutron-Induced Single Event Upset (SEU) FAQ August 2011
Joseph, SN65LVCP418 uses TI BICOM3 process technology which is a BICMOS (SiGe) process node. We do not have specific NSEU data but the reliability data that we do have is at: http://focus.ti.com/quality/docs/singlesearchresults.tsp?&templateId=5909&navigationId=11213&a...
& Shea, M. Solar particle enhancements of single-event effect rates at aircraft altitudes. IEEE Trans. Nucl. Sci. 50, 2038–2045. https://doi.org/10.1109/TNS.2003.821375 (2003). 13. Normand, E. Single event upset at ground level. IEEE Trans. Nucl. Sci. ...
single-event upsetstatic random access memorynanotechnologybeam loss monitoring systemHigh-density, fast digital devices, like field programmable gate arrays (FPGAs), microcontrollers, and static random access memories (SRAMs), can be produced by nanotechnology. New technologies allow the design of fast...
The integer counters are 4 Bytes, 6 of the 32 bits serve as Hamming-encoding, single-event upset correction. We now proceed to give the explanation of the Xmas plot starting from the left and moving through it to the right. The left most region of the Xmas plot contains the accumulators...
A single-event upset (SEU) is a soft error such as a flipped bit within a memory location. This type of SEU is detectable by reading the memory location and comparing the value with an expected value. In addition, this SEU is reversible simply by re-writing to the impacted memory ...
“hit” charge-sensitive array42. Types of circuits that may be used to count these hits include state latching circuits, glitch generating circuits, and charge loss circuits. State latching circuits are single event upset based and store the binary state change for later readout. They are ...
The equivalent coefficient of cross section of single event upset induced by protons and neutrons is established and the result is compared with the experimental data. 考虑了质子和中子在硅中的弹性散射、非弹性散射、两体反应、多体反应以及质子的库仑散射等所有相互作用类型 ,采用蒙特卡罗方法模拟跟踪入射...
The equivalent coefficient of cross section of single event upset induced by protons andneutronsis established and the result is compared with the experimental data. 考虑了质子和中子在硅中的弹性散射、非弹性散射、两体反应、多体反应以及质子的库仑散射等所有相互作用类型 ,采用蒙特卡罗方法模拟跟踪入射粒子与...