英汉 网络释义 un. 1. “或非”门
negative or gate 【计】 "或非"门 AND negative gate 【计】 "与非"门 negative ignore gate 无关非门 negative B ignore A gate 【计】 与A无关的B非门 negative A ignore B gate 【计】 与B无关的A非门 in the negative 否定地,否认地,否决的,负面的 with the negative 否定地,否认地,...
negative or gate 英文negative or gate 中文【计】 "或非"门
negative OR gatedoi:10.1007/1-4020-0613-6_12162Synonym NOR gate .Springer US
Driven by the enthusiasm toward this novel “steep-slope” device, experimentalists have been indiscriminately trying to incorporate FE materials in the gate of various “X-FETs”, where X can be SOI, Fin, nanowire (NW), 2D (such as MoS2, WSe2 etc.), or 1D (such as carbon nanotube (...
"Super ionic conductivity in (1D) nanofibrous TlGaTe2", For T>300 K, TlGaTecrystals present interesting nonlinear electrical behaviors, such as switching effects and a negative-differential-resistance (NDR) region in their S-type I-V characteristics. In the NDR region, self-excited ... H Hoc...
Dark current mechanisms in a 4-Transistor CMOS imager pixel with a negative gate bias on a transfer gate have been investigated. The increase of dark current with the negative gate bias has been attributed to the Gate-Induced-Leak (GIL) Trap Assisted Tunneling (TAT) by examining dark current...
For the problem the negative gate drive adopted , but thethe generalnegative chargepump circuit. 因此设计了一种简化负压栅极驱动电路, 电路简单,工作可靠. 互联网 The difference was determined by the surfacenegative chargeamount of different clay particles. ...
The back and front gates of a FinFET can either be shorted or remain independent, leading to two modes of operation: Shorted-Gate (SG) and ... SM Chaudhuri,NK Jha - 《Acm Journal on Emerging Technologies in Computing Systems》 被引量: 1发表: 2016年 Development and Analysis of a Three...
Nevertheless, when powering high performance devices in factory automation, building automation, and communications systems such as high speed DACs, op amps, RF power amplifiers, AFEs, GaN FET gate drivers, IGBT gate drivers, etc., a negative voltage rail is needed. Designers face a big ...