Looks like you've reached your alert limit! Please delete some alerts or contact us if you need help. CompareUPD23C16300GZ-XXX-MJH-AbyNEC Electronics Group Select a part to compare: Part NumberManufacturer说明 No result found. Something went wrong!
Supply Voltage-Nom (Vsup)5 V Surface MountNO TechnologyCMOS Temperature GradeCOMMERCIAL Terminal FormNO LEAD Terminal PositionSINGLE Alternate Parts for MC-42512A32B-60 This table gives cross-reference parts and alternative options found for MC-42512A32B-60. The Form Fit Function (FFF) tab will...
(an error like: "nr of segments and surface patches exceeds dimension limit" may be generated). If this is the case when using a Nec-2 based engine, you could switch to 'manual selection'. To do this, set the 'Manual select' option and then specify the 'Max-nr of segments' setting...
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Looks like you've reached your alert limit! Please delete some alerts or contact us if you need help. Close Compare UPD42S4260G5-80-7JF by NEC Electronics America Inc Select a part to compare: Test Part NumberManufacturer说明 No result found. Something went wrong! Or search for ...
The length λ0 of the low concentration impurity diffused layers of the P-channel MOSFET and the N-channel MOSFET of the peripheral circuit or the like needs only be determined by considering the withstand voltage against punch-through. The lower limit for the processing is given by the alignme...
there has been a limit on the efforts to reduce the thickness of each layer since the grains of a sintered body are large enough to form residual pores. A further problem in the efforts toward size reduction and larger capacity is that the inevitable increase in electrode areas leads to a ...
stage of this invention makes it possible to stabilize the output voltages of the operational amplifier circuit and to enhance or widen an output dynamic range, without an addition of feedback circuit elements which are connected in series to the feedback path and in which voltage drop develops....
such a countermeasure must be taken so as to connect the resetting transistor1and the gate transistor6must be connected, at their gate, to discharging step-down power supply having an appropriate lower voltage in order to maintain the voltage of the photo-diode4at least at a constant limit, ...
During the period from the instant T3 till the instant T4 current I2 has to flow at least the diode D2. The energy recovery switch S2 thus can reduce current to zero when its terminal voltage corresponds to the voltage drop across the diode. The switch S2 thus can be turned off with ...