We study the Anderson localization in a potential landscape with long-range power-law correlations in one dimension. We find that, for energies E close to the band edge of the unperturbed energy band, the presence of correlations makes the states more strongly localized, compared with the ...
Localization of light is the photon analog of electron localization in disordered lattices, for whose discovery Anderson received the Nobel prize in 1977. The question about its existence in open three-dimensional materials has eluded an experimental and
the PBG through its coupling to the atomic transition near the photonic band edge (the “near” transition) via the Λ configuration. As a result of this coupling, spontaneous emission through the “far” transition can be used as a probe to measure the strength of the effects of the PBG ...
We present a model calculation for the dependence of the near-band-edge photoluminescence (NBEPL) on the power of the exciting laser light. Our model explains all features of the NBEPL power dependence that were previously observed in experiment: (i) the variation of the excitonic photoluminescen...
The first-principles band structure calculations are carried out to interpret the spectral fine structure of the near-edge X-ray absorption fine structure (NEXAFS) spectrum of PdO at the O K-edge by the full-potential augmented plane wave plus local orbitals (APW+lo) method. The observed NEXAF...
4b). Specifically, the phase singularities are placed on a band along the direction orthogonal to the incident polarization. One of these points is located at the center of the nanohole with ℓ0=−1 and two are located on the edge of the hole, with topological charges ℓ1=ℓ2=+1...
For example, recently Xiaomi launched Mi Band 5 wrist band, which supports NFC based payments and transactions through the band. Currently, in the time of COVID-19 pandemic, Silicon Craft Technology PLC (SICT) has launched an NFC enabled wearable band to track COVID-19 patients and those ...
Thin films of nickel-doped zinc oxide (Zn1−xNixO) show redshift in the optical band gap and in the near band edge (NBE) emission of the photoluminescence spectra. The Zn1−xNixO thin films obtained by sol-gel spin coating method show narrowing of the band gap from 3.23 to 3.00 eV...
We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in ...
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