• Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz • Gate Length: Lg ≤ 0.20 µm • Gate Width : Wg = 160 µm 类似零件编号 - NE3210S01 制造商部件名数据表功能描述 ...
• Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz • Gate Length: Lg ≤ 0.20 µm • Gate Width : Wg = 160 µm 类似零件编号 - NE3210S01 制造商部件名数据表功能描述 ...
MAG. 16 60 Drain Current ID (mA) 40 20 12 |S21S|2 0 –2.0 –1.0 Gate to Source Voltage VGS (V) 0 8 4 1 2 4 6 8 10 14 20 30 Frequency f (GHz) Data Sheet P14067EJ2V0DS00 3 NE3210S01 Gain Calculations MSG. = S21 S12 S21 S12 K= 1 + | ∆ |2 – |S11 |2 – ...
部件名NE3210S01-T1 下载NE3210S01-T1下载 文件大小62.71 Kbytes 页16 Pages 制造商NEC [NEC] 网页http://www.nec.com/ 标志 功能描述X to KuBANDSUPERLOWNOISEAMPLIFERN-CHANNELHJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons...
部件名NE3210S01 下载NE3210S01下载 文件大小414.97 Kbytes 页7 Pages 制造商CEL [California Eastern Labs] 网页http://www.cel.com 标志 功能描述SUPERLOWNOISEHJFET 类似零件编号 - NE3210S01 制造商部件名数据表功能描述 NECNE3210S01 62Kb/16PX to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET ...
NEC's NE3210S01 is a pseudomorphic Hetero-Junction FET thatusesthejunctionbetweenSi-dopedAIGaAsandundoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and...
安全代码 :39125 输入验证码 : Please enter the above security code to download datasheet If the datasheet does not displayed, please,download the Adobe Readerorclick to view in HTML datasheet. 类似零件编号 - NE3210S01 制造商部件名数据表功能描述 ...
部件名NE3210S01 功能描述SUPERLOWNOISEHJFET Download7 Pages Scroll/Zoom 100% 制造商CEL [California Eastern Labs] 网页http://www.cel.com 标志 类似零件编号 - NE3210S01 制造商部件名数据表功能描述 NECNE3210S01 62Kb/16PX to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET ...
部件名NE3210S01 功能描述SUPERLOWNOISEHJFET Download7 Pages Scroll/Zoom 100% 制造商CEL [California Eastern Labs] 网页http://www.cel.com 标志 类似零件编号 - NE3210S01 制造商部件名数据表功能描述 NECNE3210S01 62Kb/16PX to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET ...
Datasheet下载地址 本地下载 >> NE3210S01-A的详细信息 制造商: NEC RoHS: 是 汲极/源极击穿电压: 4 V 闸/源击穿电压: - 3 V 漏极连续电流: 10 mA 功率耗散: 165 mW 安装风格: SMD/SMT 封装/ 箱体: SO-1 : 相关器件 NE321000 NE321000- NE321000_01 NE3210S01 NE3210S01-T1 NE3210S01...