Nature volume 605, pages 262–267 (2022)Cite this article 30k Accesses 185 Citations 96 Altmetric Metrics details Abstract The scaling of silicon metal–oxide–semiconductor field-effect transistors has followed Moore’s law for decades, but the physical thinning of silicon at sub-ten-nanometre ...
Huang, JK., Wan, Y., Shi, J. et al. High-κ perovskite membranes as insulators for two-dimensional transistors. Nature 605, 262–267 (2022). https://doi.org/10.1038/s41586-022-04588-2 推荐阅读: 南京大学郝玉峰教授团队ACS Nano | 基于人工神经元网络识别及表征二维材料和范德华异质结构...
Nature 605, 262–267 (2022). This paper shows ultra-thin equivalent oxide thickness dielectric integration on a 2DM transistors. Article Google Scholar Lu, Z. et al. Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration. Nat. Commun. 14, 2340 (2023)....
262 University of Connecticut (UConn) 189 57.35 263 University of Oslo (UiO) 300 57.29 264 Chinese Academy of Medical Sciences & Peking Union Medical College (CAMS & PUMC) 266 57.00 265 Goethe University Frankfurt (GU) 285 56.95 266 KTH Royal Institute of Technology 374 56.46 267 Central Chi...
6a). Cluster 1 (N = 267) was dominated by samples with metagenome-assembled genomes (MAGs) annotated to strain NCTC9343 (average nucleotide identity (ANI) > 95%), while cluster 2 (N = 67) was dominated by samples with MAGs annotated to strain Q1F2 (Methods). The ...
262 19,417 4.605 4.604 4.604 4.600 4.600 4.599 4.599 4.593 4.586 4.578 4.576 4.574 4.574 4.572 4.571 4.569 4.569 4.568 4.568 4.562 4.562 4.561 4.561 4.555 4.554 4.552 4.551 4.547 4.546 4.544 4.539 4.532 4.532 4.531 4.531 4.530 4.528 4.528 4.527 4.525 4.525 4.524 4.523 4.522 4.520 4.517 4.514 ...
从2022年7月1日到2022年12月12日中国学者在Nature发表75项研究成果详细列表: 【1】2022年12月7日,浙江大学林贤丰、范顺武及唐睿康共同通讯在Nature在线发表题为”A plant-derived natural photosynthetic system for improving cell anabolis...
Huang, JK., Wan, Y., Shi, J. et al. High-κ perovskite membranes as insulators for two-dimensional transistors.Nature605, 262–267 (2022). DOI:10.1038/s41586-022-04588-2 https://www.nature.com/articles/s41586-022-04588-2 学术交流QQ群 ...
参考文献:Huang, JK., Wan, Y., Shi, J.et al.High-κperovskite membranes as insulators for two-dimensional transistors.Nature605,262–267 (2022). https://doi.org/10.1038/s41586-022-04588-2
Huang, JK., Wan, Y., Shi, J. et al. High-κ perovskite membranes as insulators for two-dimensional transistors. Nature 605, 262–267 (2022). https://doi.org/10.1038/s41586-022-04588-2 原文链接: https://www.nature.com/articles/s41586-022-04588-2...