All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10nm,
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Scanning electron microscopy of the nanowire-nanowire junctions created without water vaporization reveals no visible ablation or damage by laser fusing. Download: Download high-res image (506KB) Download: Download full-size image Fig. 10. Demonstration of nanowire junctions and assemblies built using ...
"We fabricated silicon nanowire transistors using a CMOS process such aselectron beamand UV lithography on an eight-inch silicon-on-insulator (SOI) wafer," Gianaurelio Cuniberti, another researcher involved in the study, told TechXplore. "We then coated the nanowire devices with ion-doped silicate...
trapping”), which means that the holes and electrons are separated, allowing for transistors and photovoltaics. By controlling where these holes form in the nanowire, you can create a “seamless” junction without using anydopantmaterials tocreate impurities, as is done in modern CMOS transistors...
During that time, the cryotron was much smaller compared to other types of computing switches, such as transistors or vacuum tubes, and Buck believed that the cryotron could turn out to be the building block of computers. However, in 1959, Buck suddenly died at the age of 32, thereby curbi...
After p-n junctions were built with nanowires, the next logical step was to build logic gates. By connecting several p-n junctions together, researchers have been able to create the basis of all logic circuits: the AND, OR, and NOT gates have all been built from semiconductor nanowire cross...
Basic electronic devices such as junction diodes, transistors, Field Effect Transistors (FET)s, and logic gates can be fabricated by using semiconductor and superlattice nanowires. Nanowires are being developed for biomedical sensor applications as well as bioelectrical–mechanical applications. ...
it is to be appreciated that embodiments of the invention are not so limited and that certain embodiments may also be applicable to other nanowire based semiconductor devices such as field effect transistors (FETs), diodes, solar cells, and detectors where a base layer is used as a seed for ...
lengthwise region (121) when a voltage is applied to the first wrap gate electrode (111). Preferably a second wrap gate electrode (112) is arranged at the second lengthwise region (122). Thereby tuneable artificial junctions (114) can be accomplished without substantial doping of the nanowire ...